Method for producing frame-equipped vapor deposition mask, stretching apparatus, apparatus for producing organic semiconductor device and method for producing organic semiconductor device

ABSTRACT

A method for producing a frame-equipped vapor deposition mask sequentially includes preparing a vapor deposition mask including a metal mask having a slit and a resin mask having an opening corresponding to a pattern to be produced by vapor deposition at a position overlapping the slit, the metal mask and the resin mask being stacked, retaining a part of the vapor deposition mask by a retainer and stretching the vapor deposition mask retained by the retainer outward, and fixing the vapor deposition mask in a state of being stretched to a frame having a through hole. During stretching, any one or both adjustments of a rotating adjustment and a moving adjustment of the vapor deposition mask are performed with respect to the vapor deposition mask in the state of being stretched or with the vapor deposition mask being stretched.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a division of U.S. application Ser. No. 15/188,111,filed Jun. 21, 2016, which is a continuation of InternationalApplication No. PCT/JP2014/084246, filed Dec. 25, 2014, which designatedthe United States, the entireties of which are incorporated herein byreference.

FIELD OF THE INVENTION

Embodiments of the present invention relate to a method for producing aframe-equipped vapor deposition mask, a stretching apparatus, anapparatus for producing an organic semiconductor device and a method forproducing an organic semiconductor device.

BACKGROUND OF THE INVENTION

With upsizing of the products using organic EL elements or increase insubstrate sizes, a demand for upsizing is also growing with respect tovapor deposition masks, and the metal plates for use in production ofthe vapor deposition masks composed of metals are also upsized. However,with the present metal processing technique, it is difficult to formopenings in a large metal plate with high precision, which cannotrespond to enhancement in definition of the openings. Moreover, in thecase of a vapor deposition mask composed of only a metal, the weightthereof also increases with upsizing, and the total mass including aframe also increases, which becomes a hindrance to handling.

Under such circumstances, in Patent Document 1, there is proposed avapor deposition mask including a metal mask in which slits are providedand a resin mask which is positioned on the surface of the metal maskand in which openings corresponding to a pattern to be produced by vapordeposition are arranged for a plurality of rows in the lengthwisedirection and the crosswise direction, the metal mask and the resin maskbeing stacked. The vapor deposition mask proposed in Patent Document 1is regarded as being capable of satisfying both high definition andlightweight in upsizing, and moreover, forming a vapor depositionpattern with high definition.

When the vapor deposition pattern is formed on a vapor depositionprocessing target using the vapor deposition mask, a frame-equippedvapor deposition mask having the vapor deposition mask fixed to a framecomposed of metal material, ceramic material or the like is typicallyused. Fixing the vapor deposition mask to the frame is important to beperformed in the state where the vapor deposition mask is correctlypositioned. A part of the vapor deposition mask, for example, oppositetwo sides (both ends) of the vapor deposition mask are retained byretainers such, for example, as clamps, and fixing to the frame isperformed in the state where the vapor deposition mask is beingstretched by operating driving devices such as motors and air cylindersjoined to the clamps or the like which are the retainers.

CITATION LIST

Patent Document

Patent Document 1: Japanese Patent No. 5288072

SUMMARY OF THE INVENTION Technical Problem

In the case where the vapor deposition mask is not correctly retained bythe retainer such as the clamps, for example, in the case where bothends of the vapor deposition mask are asymmetrically retained althoughboth ends of the vapor deposition mask is parallelly retained, or in thecase where both ends of the vapor deposition mask are not parallellyretained, namely, in the case where the vapor deposition mask isretained in the state of being obliquely inclined when in order to fixthe vapor deposition mask to the frame, a part of the vapor depositionmask, for example, opposite two sides (both ends) of the vapordeposition mask are retained by the retainers such as the clamps and theretainers are pulled outward of the vapor deposition mask, as shown inFIG. 8(a) and FIG. 9(a), “twist” arises in the vapor deposition maskwhen the vapor deposition mask is stretched. Since the aforementionedvapor deposition mask that is proposed in Patent Document 1 has a resinmask in which openings corresponding to a pattern to be produced byvapor deposition are formed, variation in dimension of the openingstends to arise due to the “twist”. Accordingly, even in the case wherethe openings are formed in the resin mask with extremely highdimensional precision, unless the problem of “twist” in fixing to theframe in the state where the vapor deposition mask including the resinmask is stretched is improved, formation of the vapor deposition patternwith high definition is difficult eventually.

An embodiment of the present invention is devised under suchcircumstances and primary objects thereof are to provide a method forproducing a frame-equipped vapor deposition mask in which a vapordeposition mask is fixed to a frame in the state where “twist” issuppressed, to provide a stretching apparatus used for producing theaforementioned frame-equipped vapor deposition mask, and to provide anapparatus for producing an organic semiconductor device and a method forproducing an organic semiconductor device capable of producing anorganic semiconductor device in high precision.

Solution to Problem

According to an embodiment of the present invention to solve theaforementioned problem, there is provided a method for producing aframe-equipped vapor deposition mask, including: a preparing step ofpreparing a vapor deposition mask including a metal mask having a slitand a resin mask having an opening corresponding to a pattern to beproduced by vapor deposition at a position overlapping with the slit,the metal mask and the resin mask being stacked; a stretching step ofretaining a part of the vapor deposition mask prepared in the preparingstep by a retainer and stretching the vapor deposition mask retained bythe retainer outward thereof; and a fixing step of fixing, after thestretching step, the vapor deposition mask in a state of being stretchedto a frame having a through hole, wherein in the stretching step, anyone or both adjustments of a rotating adjustment and a moving adjustmentof the vapor deposition mask are performed with respect to the vapordeposition mask in the state of being stretched or with the vapordeposition mask being stretched.

Moreover, the aforementioned method for producing a frame-equipped vapordeposition mask may further include a locking step of locking the vapordeposition mask having undergone any one or both adjustments of therotating adjustment and the moving adjustment in the stretching step soas to maintain a state after the adjustment, wherein

in the fixing step, the locked vapor deposition mask may be fixed to theframe having the through hole.

Moreover, the aforementioned method for producing a frame-equipped vapordeposition mask may further include: a first placing step of placing thevapor deposition mask on the frame; a separating step of separating thevapor deposition mask from the frame after the first placing step; and asecond placing step of placing the vapor deposition mask again on theframe after the separating step, wherein the stretching step may beperformed before the first placing step or between the first placingstep and the separating step, and

the fixing step may be performed after the second placing step.

Moreover, the aforementioned method for producing a frame-equipped vapordeposition mask may further include, after the stretching step, aprecise adjusting step of performing a precise adjustment of the vapordeposition mask by stacking an auxiliary member on one surface of thevapor deposition mask in the state of being stretched, fixing theauxiliary member to the vapor deposition mask in at least part of aportion in which the one surface of the vapor deposition mask and theauxiliary member overlap with each other, and pulling the auxiliarymember, wherein the fixing step may be performed after the preciseadjusting step.

Moreover, in the aforementioned method for producing a frame-equippedvapor deposition mask, the retainer which retains the part of the vapordeposition mask in the stretching step may be a retainer including atleast one mechanism of a first rotating mechanism rotatable with a firstrotational axis intersecting a surface of the vapor deposition maskbeing as an axis, a second rotating mechanism rotatable with a secondrotational axis not intersecting the surface of the vapor depositionmask being as an axis, and a linearly movable moving mechanism, and inthe stretching step, any of the rotating adjustment and the movingadjustment of the vapor deposition mask may be performed by anymechanism of the first rotating mechanism, the second rotating mechanismand the moving mechanism in the retainer.

Moreover, in the aforementioned method for producing a frame-equippedvapor deposition mask, the vapor deposition mask prepared in thepreparing step may be a vapor deposition mask including a metal maskhaving a plurality of slits, and a resin mask having openings needed forconstituting a plurality of screens, the metal mask and the resin maskbeing stacked, and each of the slits may be provided at a positionoverlapping with an entirety of at least one screen. Moreover, in theaforementioned method for producing a frame-equipped vapor depositionmask, the vapor deposition mask prepared in the preparing step may be avapor deposition mask including a metal mask having one slit, and aresin mask having a plurality of openings, the metal mask and the resinmask being stacked, and all of the plurality of openings may be providedat a position overlapping with the one slit.

Moreover, according to an embodiment of the present invention to solvethe aforementioned problem, there is provided a stretching apparatus forstretching a vapor deposition mask, including: a retainer that retains apart of the vapor deposition mask; and a stretching mechanism forstretching the vapor deposition mask retained by the retainer, whereinthe retainer includes at least one mechanism of a first rotatingmechanism rotatable with a first rotational axis intersecting a surfaceof the vapor deposition mask being as an axis, a second rotatingmechanism rotatable with a second rotational axis not intersecting thesurface of the vapor deposition mask being as an axis, and a linearlymovable moving mechanism.

Moreover, the aforementioned stretching apparatus may include a drivestage for driving a frame, wherein the drive stage may include a movingmechanism movable in a direction intersecting an installation plane ofthe stretching apparatus.

Moreover, the retainer in the aforementioned stretching apparatus mayinclude a moving mechanism movable in a direction intersecting aninstallation plane of the stretching apparatus.

Moreover, according to an embodiment of the present invention to solvethe aforementioned problem, there is provided an apparatus for producingan organic semiconductor device, wherein the aforementioned stretchingapparatus is implemented.

Moreover, according to an embodiment of the present invention to solvethe aforementioned problem, there is provided a method for producing anorganic semiconductor device, including a step of forming a vapordeposition pattern on a vapor deposition target using a frame-equippedvapor deposition mask in which a vapor deposition mask is fixed to aframe, wherein the frame-equipped vapor deposition mask used in the stepof forming the vapor deposition pattern is a frame-equipped vapordeposition mask obtained by a stretching step of retaining a part of thevapor deposition mask by a retainer, stretching the vapor depositionmask retained by the retainer outward thereof, and performing any one orboth adjustments of a rotating adjustment and a moving adjustment of thevapor deposition mask with respect to the vapor deposition mask in astate of being stretched or with the vapor deposition mask beingstretched, and a fixing step of fixing, after the stretching step, thevapor deposition mask in the state of being stretched to the framehaving a through hole.

Advantageous Effects

According to the method for producing a frame-equipped vapor depositionmask and the stretching apparatus of an embodiment of the presentinvention, a frame-equipped vapor deposition mask in which a vapordeposition mask is fixed to a frame can be produced in the state where“twist” is suppressed. Moreover, according to the apparatus forproducing an organic semiconductor device and the method for producingan organic semiconductor device of an embodiment of the presentinvention, an organic semiconductor device can be produced withexcellent precision.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a diagram exemplarily showing a vapor deposition mask preparedin a preparing step, portion (a) is a top view thereof as seen from ametal mask side and portion (b) is a cross-sectional view taken alongthe line A-A in portion (a).

FIG. 2 is a top view of the vapor deposition mask of Embodiment (A)prepared in the preparing step as seen from the metal mask side.

FIG. 3 is a top view of the vapor deposition mask of Embodiment (A)prepared in the preparing step as seen from the metal mask side.

FIG. 4 is a top view of the vapor deposition mask of Embodiment (A)prepared in the preparing step as seen from the metal mask side.

FIG. 5 presents top views of the vapor deposition mask of Embodiment (A)prepared in the preparing step as seen from the metal mask side.

FIG. 6 is a top view of the vapor deposition mask of Embodiment (B)prepared in the preparing step as seen from the metal mask side.

FIG. 7 is a top view of the vapor deposition mask of Embodiment (B)prepared in the preparing step as seen from the metal mask side.

FIG. 8 are top views exemplarily showing the vapor deposition maskstretched in a stretching step, portion (a) is a top view showing astate where “twist” arises in the vapor deposition mask and portion (b)is a top view showing a state where “twist” in the vapor deposition maskis suppressed.

FIG. 9 are top views exemplarily showing the vapor deposition maskstretched in the stretching step, portion (a) is a top view showing astate where “twist” arises in the vapor deposition mask and portion (b)is a top view showing a state where “twist” in the vapor deposition maskis suppressed.

FIG. 10 is a perspective view for explaining a first rotating mechanism.

FIG. 11 is a perspective view for explaining a second rotatingmechanism.

FIG. 12 is a perspective view for explaining a moving mechanism.

FIG. 13 is a top view for explaining the stretching step.

FIG. 14 portion (a) is a top view for explaining the stretching step andportion (b) is an elevation view thereof.

FIG. 15 is an elevation view for explaining the stretching step.

FIG. 16 is a top view for explaining the stretching step.

FIG. 17 presents top views for explaining the stretching step.

FIG. 18 is a top view for explaining the stretching step.

FIG. 19 is a top view for explaining a fixing step.

FIG. 20 is a top view for explaining the fixing step.

FIG. 21 portions (a) to (c) are top views exemplarily showing a frame.

FIG. 22 is a top view exemplarily showing a frame-equipped vapordeposition mask.

FIG. 23 is a top view exemplarily showing the frame-equipped vapordeposition mask.

FIG. 24 are diagrams for explaining a precise adjusting step andportions (a) and (b) are elevation views of the vapor deposition mask asseen from the resin mask side.

FIG. 25 Portions (a) to (c) are partial schematic cross-sectional viewsshowing a state where a vapor deposition mask 100 is retained by aretainer 80 and portions (d) to (f) are views showing the retainer 80having a projection part in plan view from the projection part 82 side.

DETAILED DESCRIPTION OF THE INVENTION

Hereafter; a method for producing a frame-equipped vapor deposition maskof an embodiment of the present invention is specifically describedusing the drawings.

Method for Producing Frame-Equipped Vapor Deposition Mask

A method for producing a frame-equipped vapor deposition mask of anembodiment includes: a preparing step of preparing a vapor depositionmask 100 including a metal mask 10 in which a slit 15 is formed and aresin mask 20 in which an opening 25 corresponding to a pattern to beproduced by vapor deposition is formed at a position overlapping withthe slit, the metal mask and the resin mask being stacked; a stretchingstep of retaining a part of the vapor deposition mask 100 prepared inthe preparing step by a retainer 80 and stretching the vapor depositionmask retained by the retainer 80 outward thereof; and a fixing step offixing, after the stretching step, the vapor deposition mask in a stateof being stretched to a frame 60 in which a through hole is formed,wherein in the stretching step, any one or both adjustments of arotating adjustment and a moving adjustment of the vapor deposition maskare performed with respect to the vapor deposition mask in the state ofbeing stretched or with the vapor deposition mask being stretched.

The method for producing a frame-equipped vapor deposition mask by wayof example includes: a preparing step of preparing a vapor depositionmask 100 including a metal mask 10 in which a slit 15 is formed and aresin mask 20 in which an opening 25 corresponding to a pattern to beproduced by vapor deposition is formed at a position overlapping withthe slit, the metal mask and the resin mask being stacked; a stretchingstep of retaining opposite two sides of the vapor deposition maskprepared in the preparing step by retainers 80 and stretching the vapordeposition mask outward thereof by pulling at least one of the retainers80 outward of the vapor deposition mask; and a fixing step of fixing thevapor deposition mask in a state of being stretched in the stretchingstep to a frame in which a through hole is formed, wherein in thestretching step, at least one of the retainers 80 retaining the vapordeposition mask is a retainer 80 including at least one mechanism of afirst rotating mechanism rotatable with a first rotational axisintersecting a surface of the vapor deposition mask, for example, afirst rotational axis perpendicular to the surface of the vapordeposition mask being as an axis, a second rotating mechanism rotatablewith a second rotational axis not intersecting the surface of the vapordeposition mask, for example, a second rotational axis parallel to thesurface of the vapor deposition mask being as an axis, and a movingmechanism linearly movable, for example, linearly movable in a directionperpendicular to a direction in which the vapor deposition mask isstretched, and in the stretching step, any one or both adjustments of arotating adjustment and a moving adjustment of the vapor deposition maskare performed by the retainers 80 with respect to the vapor depositionmask in the state of being stretched or with the vapor deposition maskbeing stretched.

Hereafter, the steps are described.

Preparing Step

As shown in FIGS. 1(a) and 1(b), the preparing step is a step ofpreparing the vapor deposition mask 100 including the metal mask 10 inwhich the slits 15 are formed and the resin mask 20 in which theopenings 25 corresponding to a pattern to be produced by vapordeposition are formed at a position overlapping with the slits, themetal mask and the resin mask being stacked.

Resin Mask

As shown in FIG. 1, a plurality of openings 25 are provided in the resinmask 20. FIG. 1(a) is a top view of a vapor deposition mask used in themethod for producing a frame-equipped vapor deposition mask of anembodiment as seen from the metal mask side and FIG. 1(b) is a schematiccross-sectional view taken along the line A-A in FIG. 1(a).

While in the mode shown in the figure, the opening shape of the opening25 exhibits a rectangular shape, the opening shape is not speciallylimited but it may be any shape as long as it is a shape correspondingto a pattern to be produced by vapor deposition. For example, theopening shape of the opening 25 may be rhombic or polygonal or may be ashape having a curvature such as a circle and an ellipsoid. Notably, itcan be said that the rectangular or polygonal opening shape is apreferable opening shape of the opening 25 in view of capability ofsecuring a larger area of light emission as compared with the openingshape having a curvature such as a circle and an ellipsoid.

The material of the resin mask 20 is not limited but, for example, amaterial that enables formation of the opening 25 with high definitionby laser processing or the like, has a low rate of dimensional changeand a low rate of humidity absorption under heat and with passage oftime, and is light weight, is preferably used. As such materials, apolyimide resin, a polyamide resin, a polyamide-imide resin, a polyesterresin, a polyethylene resin, a polyvinylalcohol resin, a polypropyleneresin, a polycarbonate resin, a polystyrene resin, a polyacrylonitrileresin, an ethylene-vinyl acetate copolymer resin, anethylene-vinylalcohol copolymer resin, an ethylene-methacrylic acidcopolymer resin, a polyvinyl chloride resin, a polyvinylidene chlorideresin, cellophane, an ionomer resin and the like can be cited. Among thematerials shown above by way of example, the resin materials with thethermal expansion coefficients of about 16 ppm/° C. or less arepreferable, the resin materials with the rates of humidity absorption ofabout 1.0% or less are preferable, and the resin materials includingboth conditions are particularly preferable. The resin mask using theseresin materials enables dimensional precision of the openings 25 to beimproved and a rate of dimensional change and a rate of humidityabsorption under heat and with passage of time to be small.

The thickness of the resin mask 20 is not specially limited but, in thecase of further improving the effect of suppressing generation of ashadow, the thickness of the resin mask 20 is preferably about 25 μm orless, still preferably less than about 10 μm. A preferable range of thelower limit value is not specially limited but, in the case where thethickness of the resin mask 20 is less than about 3 μm, defects such asa pinhole tend to arise and a risk of deformation or the like increases.In particular, by setting the thickness of the resin mask 20 to be about3 μm or more and less than about 10 μm, still preferably about 4 μm ormore and about 8 μm or less, the influence of a shadow in formation of ahigh definition pattern exceeding 400 ppi can be more effectivelyprevented. Moreover, while the resin mask 20 may be directly bonded tothe metal mask 10 mentioned later or may be bonded thereto via anadhesive layer, in the case where the resin mask 20 is bonded to themetal mask 10 via the adhesive layer, the total thickness of the resinmask 20 and the adhesive layer is preferably within the aforementionedpreferable thickness range. Notably, the shadow is a phenomenon that apart of a vapor deposition material released from a vapor depositionsource collides with inner wall surfaces of the slit of the metal maskand/or the opening of the resin mask and does not reach the vapordeposition target, and thereby, a portion without vapor deposition thathas a film thickness smaller than the intended vapor deposition filmthickness arises.

The sectional shape of the opening 25 is not specially limited and endsurfaces that face each other and are of the resin mask forming theopening 25 may be substantially parallel to each other, but as shown inFIG. 1(b), the sectional shape of the opening 25 is preferably the shapehaving broadening toward a vapor deposition source. In other words, itpreferably has a taper surface having broadening toward the metal mask10 side. While a taper angle can be properly set with the thickness orthe like of the resin mask 20 taken into consideration, an angle formedby a straight line connecting a lower bottom distal end in the openingof the resin mask and an upper bottom distal end of the opening of thesame resin mask and the bottom surface of the resin mask, in otherwords, an angle formed by an inner wall surface of the opening 25 and asurface of the resin mask 20 on the side that is not in contact with themetal mask 10 (a lower surface of the resin mask in the mode shown inthe figure) in the cross section in the thickness direction of the innerwall surface composing the opening 25 of the resin mask 20 is preferablywithin a range of about 5° to about 85°, still preferably within a rangeof about 15° to about 75°, further preferably within a range of about25° to about 65°. In particular, within this range, it is preferably anangle smaller than a vapor deposition angle of a vapor depositionmachine to be used. Moreover, in the mode shown in the figure, while anend surface that forms the opening 25 exhibits a linear shape, it is notlimited thereto but may be in a curved shape convex outward, in otherwords, a shape of the entirety of the opening 25 may be a bowl shape.

Metal Mask

As shown in FIG. 1(b), the metal mask 10 is stacked on one side of theresin mask 20. The metal mask 10 is composed of metal, in which theslits 15 extending in the lengthwise direction or the crosswisedirection are arranged. The slit 15 is synonymous with an opening. Anarrangement example of the slits is not specially limited. The slitsextending in the lengthwise direction and the crosswise direction may bearranged in a plurality of rows in the lengthwise direction and thecrosswise direction. The slits extending in the lengthwise direction maybe arranged in a plurality of rows in the crosswise direction. The slitsextending in the crosswise direction may be arranged in a plurality ofrows in the lengthwise direction. Moreover, they may be arranged in onlyone row in the lengthwise direction or the crosswise direction. Notably,“lengthwise direction” and “crosswise direction” stated in the presentspecification indicate the vertical direction and the horizontaldirection in the drawings, respectively, and may be any directions ofthe longitudinal direction and the width direction of the vapordeposition mask, the resin mask and the metal mask. For example, thelongitudinal direction of the vapor deposition mask, the resin mask andthe metal mask may be set to be the “lengthwise direction”, or the widthdirection thereof may be set to be the “lengthwise direction”. Moreover,while in the present specification, the case where the shape of thevapor deposition mask in plan view is a rectangular shape is exemplarilydescribed, it may be another shape such, for example, as a circularshape and a polygonal shape such as a rhombic shape. In this case, thelongitudinal direction of the diagonal line, the radial direction, orany direction only has to be set as the “longitudinal direction”, thedirection perpendicular to the “longitudinal direction” set as the“width direction (sometimes referred to as short-side direction)”.

The material of the metal mask 10 is not specially limited but aconventionally known one in the field of the vapor deposition mask canbe properly selected and used, and, for example, a metal material suchas stainless steel, an iron-nickel alloy and an aluminum alloy can becited. Above all, an invar material which is an iron-nickel alloy can bepreferably used since an invar material is hardly deformed by heat.

While the thickness of the metal mask 10 is not specially limited, inorder to more effectively prevent generation of a shadow, it ispreferably about 100 μm or less, still preferably about 50 μm or less,particularly preferably about 35 μm or less. Notably, in the case ofbeing thinner than about 5 μm, risks of rupture and deformation tend toincrease and handling tends to become difficult.

Moreover, while in the mode shown in FIG. 1(a), the shape of the openingof the slit 15 in plan view exhibits a rectangular shape, the openingshape is not specially limited but the opening shape of the slit 15 maybe any shape such as a trapezoid and a circle.

The sectional shape of the slit 15 formed in the metal mask 10 is notspecially limited but is preferably a shape having broadening toward thevapor deposition source as shown in FIG. 1(b). More specifically, anangle formed by a straight line connecting the lower bottom distal endin the slit 15 of the metal mask 10 and the upper bottom distal end inthe same slit 15 of the metal mask 10 and the bottom surface of themetal mask 10, in other words, an angle formed by the inner wall surfaceof the slit 15 and the surface of the metal mask 10 on the side of beingin contact with the resin mask 20 (the lower surface of the metal maskin the shown mode) in the thicknesswise cross section of the inner wallsurface composing the slit 15 of the metal mask 10 is preferably withina range of about 5° to about 85°, still preferably within a range ofabout 15° to about 80°, further preferably within a range of about 25°to about 65°. In particular, within this range, it is preferably anangle smaller than a vapor deposition angle of a vapor depositionmachine to be used.

A method of stacking the metal mask 10 on the resin mask is notspecially limited but the metal mask 10 may be pasted on the resin mask20 using various adhesives or the resin mask that has self-adhesion maybe used. The dimensions of the resin mask 20 and the metal mask 10 maybe the same or may be different dimensions. Notably, with fixing to aframe which is arbitrarily performed afterward taken into consideration,the dimension of the resin mask 20 is preferably made smaller than thatof the metal mask 10 to set the outer circumferential portion of themetal mask 10 to be in the state of exposure, which facilitates fixingof the metal mask 10 to the frame.

Hereafter, preferable modes of the vapor deposition mask prepared in thepresent step are described, exemplified by Embodiment (A) and Embodiment(B). Notably, the vapor deposition mask 100 prepared in the present stepis not limited to Embodiment (A) and Embodiment (B) described below butmay be in any mode as long as a condition that the metal mask 10 inwhich the slit 15 is formed and the resin mask 20 in which the opening25 corresponding to a pattern to be produced by vapor deposition isformed at a position overlapping with the slit 15 are stacked issatisfied. For example, the slit 15 formed in the metal mask 10 may be astripe shape (not shown). Moreover, the slit 15 of the metal mask 10 maybe provided at a position of not overlapping with the entirety of onescreen.

Vapor Deposition Mask of Embodiment (A)

As shown in FIG. 2, the vapor deposition mask 100 of Embodiment (A) is avapor deposition mask for simultaneously forming vapor depositionpatterns for a plurality of screens and includes the metal mask 10 inwhich the plurality of slits 15 are provided and the resin mask 20, themetal mask being stacked on one surface of the resin mask, wherein theopenings 25 needed for composing the plurality of screens are providedin the resin mask 20, and each slit 15 is provided at a positionoverlapping with the entirety of at least one screen.

The vapor deposition mask 100 of Embodiment (A) is a vapor depositionmask used for simultaneously forming vapor deposition patterns for aplurality of screens. One vapor deposition mask 100 can simultaneouslyform vapor deposition patterns compatible with a plurality of products.“Openings” stated for the vapor deposition mask of Embodiment (A) meanpatterns to be produced using the vapor deposition masks 100 ofEmbodiment (A). For example, when the vapor deposition mask is used forforming an organic layer in an organic EL display, the shape of theopenings 25 is a shape of the organic layer. Moreover, “one screen” isconstituted of an aggregate of openings 25 corresponding to one product.When the one product is an organic EL display, an aggregate of organiclayers needed for forming one organic EL display, in other words, anaggregate of openings 25 to be the organic layers is “one screen”.Further, in the vapor deposition mask 100 of Embodiment (A), in order tosimultaneously form the vapor deposition patterns for the plurality ofscreens, the aforementioned “one screen” is arranged for each of theplurality of screens in the resin mask 20 at predetermined intervals.Namely, in the resin mask 20, the openings 25 needed for composing theplurality of screens are provided.

The vapor deposition mask of Embodiment (A) includes the metal mask 10in which the plurality of slits 15 are provided, the metal mask beingstacked on one surface of the resin mask, wherein each slit is providedat the position overlapping with the entirety of at least one screen. Inother words, it is characterized in that between the openings 25 neededfor composing one screen, metal line portions which have the same lengthas the length of the slit 15 in the lengthwise direction and have thesame thickness as that of the metal mask 10 between the openings 25adjacent in the crosswise direction, or metal line portions which havethe same length as the length of the slit 15 in the crosswise directionand have the same thickness as that of the metal mask 10 between theopenings 25 adjacent in the lengthwise direction do not exist.Hereafter, the metal line portions which have the same length as thelength of the slit 15 in the lengthwise direction and have the samethickness as that of the metal mask 10 and the metal line portions whichhave the same length as the length of the slit 15 in the crosswisedirection and have the same thickness as that of the metal mask 10 aresometimes collectively referred to simply as metal line portions.

According to the vapor deposition mask 100 of Embodiment (A), even whenthe dimension of the openings 25 needed for composing one screen and thepitch between the openings 25 composing one screen are made small, forexample, even when the dimension of the openings 25 and the pitchbetween the openings 25 are made extremely fine in order to form ascreen exceeding 400 ppi, interference due to metal line portions can beprevented and an image with high definition can be formed. Notably, whenone screen is divided by a plurality of slits, in other words, when themetal line portions having the same thickness as that of the metal mask10 exist between the openings 25 composing one screen, as the pitchbetween the openings 25 composing one screen is smaller, the metal lineportions existing between the openings 25 more become a hindrance informing the vapor deposition pattern on the vapor deposition target andthe vapor deposition pattern with high definition is more difficult tobe formed. In other words, when the metal line portions having the samethickness as that of the metal mask 10 exist between the openings 25composing one screen, the metal line portions in the case of being theframe-equipped vapor deposition mask cause generation of a shadow, whichresults in difficulty of formation of a screen with high definition.

Next, referring to FIG. 2 to FIG. 6, the openings 25 composing onescreen are exemplarily described. Notably, a region enclosed by a brokenline in the modes shown in the figures is one screen. While in the modesshown in the figures, an aggregate of a small number of openings 25 isone screen for convenience of description, not limited to these modes,for example, the openings 25 for millions of pixels may be present inone screen, where one opening 25 is one pixel.

In the mode shown in FIG. 2, one screen is composed of an aggregate ofopenings 25 having a plurality of openings 25 provided in the lengthwisedirection and the crosswise direction. In the mode shown in FIG. 3, onescreen is composed of an aggregate of openings 25 having a plurality ofopenings 25 provided in the crosswise direction. Moreover, in the modeshown in FIG. 4, one screen is composed of an aggregate of openings 25having a plurality of openings 25 in the lengthwise direction. Further,in FIG. 2 to FIG. 4, the slit 15 is provided at a position overlappingwith the entirety of one screen.

As described above, the slit 15 may be provided at a positionoverlapping with only one screen, or as shown in FIGS. 5(a) and 5(b),may be provided at a position overlapping with the entirety of two ormore screens. In FIG. 5(a), in the resin mask 10 shown in FIG. 2, theslit 15 is provided at a position overlapping with the entirety of twoscreens continuous in the crosswise direction. In FIG. 5(b), the slit 15is provided at a position overlapping with the entirety of three screenscontinuous in the lengthwise direction.

Next, exemplified by the mode shown in FIG. 2, pitches between theopenings 25 composing one screen and pitches between the screens aredescribed. The pitches between the openings 25 composing one screen andthe dimension of the opening 25 are not specially limited but can beproperly set depending on the pattern to be produced by vapordeposition. For example, when forming the vapor deposition pattern withhigh definition of 400 ppi, a pitch (P1) in the crosswise direction anda pitch (P2) in the lengthwise direction between the neighboringopenings 25 out of the openings 25 composing one screen are about 60 μm.Moreover, the dimension of the opening is about 500 μm² to about 1000μm². Moreover, one opening 25 is not limited to correspond to one pixelbut, for example, a plurality of pixels can also be collectively oneopening 25 depending on a pixel arrangement.

While a pitch (P3) in the crosswise direction and a pitch (P4) in thelengthwise direction between the screens are not specially limited but,as shown in FIG. 2, when one slit 15 is provided at the positionoverlapping with the entirety of one screen, metal line portions are toexist between the screens. Accordingly, when the pitch (P3) in thecrosswise direction and the pitch (P4) in the lengthwise directionbetween the screens are smaller than or substantially equal to the pitch(P1) in the crosswise direction and the pitch (P2) in the lengthwisedirection of the openings 25 provided in one screen, the metal lineportions existing between the screens are liable to break. Accordingly,with this point taken into consideration, the pitch (P3, P4) between thescreens is preferably wider than the pitch (P1, P2) between the openings25 composing one screen. The pitch (P3, P4) between the screens isexemplarily about 1 mm to about 100 mm. Notably, the pitch between thescreens means the pitch between the neighboring openings in one screenand another screen adjacent to the one screen. The same holds true forthe pitch between the openings 25 and the pitch between the screens inthe vapor deposition mask of Embodiment (B) mentioned later.

Notably, as shown in FIG. 5, when one slit 15 is provided at theposition overlapping with the entirety of two or more screens, metalline portions composing the inner wall surfaces of the slit are not toexist between the plurality of screens provided in the one slit 15.Accordingly, in this case, the pitch between the two or more screensprovided at the position overlapping with the one slit 15 may besubstantially equal to the pitch between the openings 25 composing onescreen.

Moreover, on the resin mask 20, grooves (not shown) are preferablyformed to extend in the lengthwise direction or the crosswise directionof the resin mask 20.

While in the case of application of heat in vapor deposition, there is apossibility that the resin mask 20 undergoes thermal expansion, andthereby, changes in dimension and position of the opening 25 arise, byforming the grooves, they can absorb the expansion of the resin mask,and can prevent the changes in dimension and position of the opening 25caused by the resin mask 20 expanding in a predetermined direction as awhole due to accumulation of thermal expansions arising in portions inthe resin mask. Formation positions of the grooves are not limited butwhile they may be provided between the openings 25 composing one screenand at positions overlapping with the openings 25, they are preferablyprovided between the screens. Moreover, the grooves may be provided onone surface of the resin mask, for example, only on the surface on theside that is in contact with the metal mask, or may be provided only onthe surface on the side that is not in contact with the metal mask.Otherwise, they may be provided on both surfaces of the resin mask 20.

Moreover, the grooves extending in the lengthwise direction may bebetween the neighboring screens, or the grooves extending in thecrosswise direction may be formed between the neighboring screens.Furthermore, the grooves can also be formed in an aspect having thesecombined.

The depth and the width of the grooves are not specially limited butsince the rigidity of the resin mask 20 tends to decrease in the casewhere the depth of the grooves is too large and in the case where thewidth thereof is too large, setting is needed with this point taken intoconsideration. Moreover, the sectional shape of the grooves is notspecially limited but only has to be arbitrarily selected as a U-shape,a V-shape or the like with the processing method and the like taken intoconsideration. The same holds true for the vapor deposition mask ofEmbodiment (B).

Vapor Deposition Mask of Embodiment (B)

Next, the vapor deposition mask of Embodiment (B) is described. As shownin FIG. 6, the vapor deposition mask of Embodiment (B) includes themetal mask 10 in which one slit (one hole 16) is provided and the resinmask 20 in which the plurality of openings 25 corresponding to a patternto be produced by vapor deposition are provided, the metal mask beingstacked on one surface of resin mask, wherein all of the plurality ofopenings 25 are provided at a position overlapping with the one hole 16provided in the metal mask 10.

The opening 25 stated for the vapor deposition mask of Embodiment (B)means an opening needed for forming the vapor deposition pattern on thevapor deposition target. An opening not needed for forming the vapordeposition pattern on the vapor deposition target may be provided at aposition of not overlapping with the one hole 16. Notably, FIG. 6 is atop view which exemplarily shows the vapor deposition mask of Embodiment(B) and is of the vapor deposition mask as seen from the metal maskside.

In the vapor deposition mask 100 of Embodiment (B), the metal mask 10having the one hole 16 is provided on the resin mask 20 having theplurality of openings 25, and all of the plurality of openings 25 areprovided at a position overlapping with the one hole 16. In the vapordeposition mask 100 of Embodiment (B) that has this configuration, metalline portions that have the same thickness as the thickness of the metalmask or a larger thickness than the thickness of the metal mask do notexist between the openings 25. Hence, as described for theaforementioned vapor deposition mask of Embodiment (A), the vapordeposition pattern with high definition can be formed to match thedimensions of the openings 25 provided in the resin mask 20 withoutsuffering interference of metal line portions.

Moreover, according to the vapor deposition mask of Embodiment (B),there is almost no influence of a shadow even when the thickness of themetal mask 10 is made large. Hence, the thickness of the metal mask 10can be made larger to such an extent that durability and handlingability are sufficiently satisfied. While a vapor deposition patternwith high definition can be formed, durability and handling ability canbe improved.

The resin mask 20 in the vapor deposition mask of Embodiment (B) iscomposed of resin, in which as shown in FIG. 6, the plurality ofopenings 25 corresponding to a pattern to be produced by vapordeposition are provided at a position overlapping with the one hole 16.The openings 25 correspond to the pattern to be produced by vapordeposition. By a vapor deposition material released from a vapordeposition source passing through the openings 25, the vapor depositionpattern corresponding to the openings 25 is formed on the vapordeposition target. Notably, while in the mode shown in the figure, theopenings arranged in a plurality of rows in the lengthwise direction andthe crosswise direction are exemplarily described, they may be arrangedonly in the lengthwise direction or in the crosswise direction.

“One screen” in the vapor deposition mask 100 of Embodiment (B) means anaggregate of openings 25 corresponding to one product. When the oneproduct is an organic EL display, an aggregate of organic layers neededfor forming one organic EL display, in other words, an aggregate ofopenings 25 to be the organic layers is “one screen”. While the vapordeposition mask of Embodiment (B) may be constituted of only “onescreen” or may be provided by arranging the “one screen” for each of aplurality of screens, in the case where the “one screen” is arranged foreach of the plurality of screens, the openings 25 are preferablyprovided at predetermined intervals on a screen-by-screen basis (referto FIG. 5 for the vapor deposition mask of Embodiment (A)). The mode of“one screen” is not specially limited but, for example, the one screencan also be composed of millions of openings 25, where one opening 25 isone pixel.

The metal mask 10 in the vapor deposition mask 100 of Embodiment (B) iscomposed of metal and includes the one hole 16. Further, in anembodiment of the present invention, the one hole 16 is disposed at aposition overlapping with all of the openings 25 as seen head-on of themetal mask 10, in other words, at a position where all of the openings25 arranged in the resin mask 20 can be seen.

The metal portion composing the metal mask 10, that is, the portionthereof other than the one hole 16 may be provided along the outer edgeof the vapor deposition mask 100 as shown in FIG. 6, or the dimension ofthe metal mask 10 may be made smaller than that of the resin mask 20 toexpose an outer circumferential portion of the resin mask 20 as shown inFIG. 7. Moreover, the dimension of the metal mask 10 may be made largerthan that of the resin mask 20, so that a part of the metal portion iscaused to protrude outward in the crosswise direction of the resin maskor outward in the lengthwise direction thereof. Notably, in any cases,the dimension of the one hole 16 is configured to be smaller than thedimension of the resin mask 20.

While a width (W1), in the crosswise direction, and a width (W2), in thelengthwise direction, of the metal portion constituting the wall surfaceof the one hole 16 of the metal mask 10 shown in FIG. 6 are notspecially limited, as the width W1, W2 is made smaller, durability andhandling ability tend to deteriorate more. Accordingly, W1 and W2 arepreferably widths by which durability and handling ability aresufficiently satisfied. While appropriate widths can be properly setdepending on the thickness of the metal mask 10, as an example ofpreferable widths, both W1 and W2 are about 1 mm to about 100 mm, whichare the same widths of the metal mask in the vapor deposition mask ofEmbodiment (A).

Hereafter, the method for producing a vapor deposition mask prepared inthe present step is exemplarily described. The vapor deposition mask 100prepared in the preparing step can be obtained by preparing the resinplate-equipped metal mask in which the metal mask 10 provided with theslits 15 is stacked on one surface of the resin plate, and next,irradiating the resin plate-equipped metal mask with laser through theslits 15 from the metal mask 10 side to form the openings 25corresponding to a pattern to be produced by vapor deposition in theresin plate.

As a method of forming the resin plate-equipped metal mask, the metalmask 10 provided with the slits 15 is stacked on one surface of theresin plate. The resin plate can employ the materials described for theaforementioned resin mask 20.

As the method for forming the metal mask 10 in which the slits 15 areprovided, a masking member, for example, a resist material is appliedonto the surface of the metal plate, predetermined portions thereof areexposed and developed, and thereby, a resist pattern in which positionswhere the slits 15 are finally to be formed remain is formed. The resistmaterial used as the masking member is preferably excellent inprocessing ability with desired resolution. Next, etching processing isperformed by an etching method using the resist pattern as an etchingresistant mask. After the completion of the etching, the resist patternis cleaned and removed. In this way, the metal mask 10 in which theslits 15 are provided is obtained. The etching for forming the slits 15may be performed on one surface side of the metal plate or may beperformed on both surfaces thereof. Moreover, in the case where theslits 15 are formed in the metal plate using the stacked body in whichthe resin plate is provided on the metal plate, the masking member isapplied onto the surface of the metal plate on the side that is not incontact with the resin plate, and the slits 15 are formed by the etchingfrom one surface side. Notably, in the case where the resin plate hasetching resistance with respect to the etching agent for the metalplate, masking of the surface of the resin plate is not needed but, inthe case where the resin plate does not have resistance with respect tothe etching agent for the metal plate, the masking member is needed tobe applied onto the surface of the resin plate. Moreover, in the above,while the resist material is mainly described as the masking member, inplace of the application of the resist material, a dry film resist maybe laminated to perform the similar patterning.

In the aforementioned method, the resin plate composing the resinplate-equipped metal mask may be a resin layer or a resin film formed bycoating as well as a plate-shaped resin. In other words, the resin platemay be beforehand prepared. In the case of forming the resinplate-equipped metal mask using the metal plate and the resin plate, theresin layer or the resin film to be the resin mask in the final stagecan also be formed on the metal plate by a conventionally known coatingmethod or the like.

As a method for forming the openings 25, the resin plate is penetratedusing a laser processing method, fine press processing, photolithographyprocessing or the like on the resin plate-equipped metal mask preparedabove to form the openings 25 corresponding to the pattern to beproduced by vapor deposition in the resin plate. Thereby, the vapordeposition mask 100 of an embodiment is obtained in which the metal mask10 provided with the slits 15 is stacked on one surface of the resinmask 20 in which the openings 25 corresponding to the pattern to beproduced by vapor deposition are provided. Notably, in view ofcapability of easily forming the openings 25 with high definition, thelaser processing method is preferably used for the formation of theopenings 25.

While in the vapor deposition mask 100 in the mode shown in each figure,the shape of the vapor deposition mask in plan view exhibits arectangular shape, the shape of the vapor deposition mask in plan viewis not limited to this shape but any shapes such, for example, as acircular shape and a polygonal shape can be cited.

Stretching Step

A stretching step is a step of retaining a part of the vapor depositionmask 100 prepared in the preparing step by the retainer 80 andstretching the vapor deposition mask retained by the retainer 80 outwardthereof. In the stretching step by way of example, opposite two sides ofthe vapor deposition mask prepared in the preparing step are retained bythe retainer 80 and at least one of the retainers 80 is pulled outwardof the vapor deposition mask. For example, a driving device such as amotor and an air cylinder joined with the retainer 80 is actuated andthe vapor deposition mask 100 retained by the retainer 80 is stretchedoutward thereof.

Then, in the stretching step, the method for producing a frame-equippedvapor deposition mask of an embodiment is characterized in that a partof the vapor deposition mask 100 is retained by the retainer 80 and anyone or both adjustments of a rotating adjustment and a moving adjustmentof the vapor deposition mask are performed with the vapor depositionmask retained by the retainer 80 being stretched outward thereof or withrespect to the vapor deposition mask in the state of being stretched.

While a retaining position of the vapor deposition mask 100 by theretainer 80 is not limited, the vicinity of the end part of the vapordeposition mask 100 is typically the retaining position of the vapordeposition mask 100 by the retainer 80. To retain the vapor depositionmask 100 by the retainer 80 may be performed using only one retainer 80or may be performed using a plurality of retainers 80.

Hereafter, specific devices for implementing the rotating adjustment andthe moving adjustment in the stretching step are described, exemplifiedby mechanisms included in the retainer 80. Notably, the rotatingadjustment and the moving adjustment may be implemented by others otherthan the devices described below.

In the stretching step by way of example, the retainer 80 retaining apart of the vapor deposition mask 100 includes at least one mechanism ofa first rotating mechanism rotatable with a first rotational axisintersecting a surface of the vapor deposition mask 100 being as an axis(hereinafter sometimes referred to simply as first rotating mechanism),a second rotating mechanism rotatable with a second rotational axis notintersecting the surface of the vapor deposition mask 100 being as anaxis (hereinafter sometimes referred to simply as second rotatingmechanism), and a linearly movable moving mechanism (hereinaftersometimes referred to simply as moving mechanism), and any one or bothadjustments of the rotating adjustment and the moving adjustment of thevapor deposition mask 100 are performed by the retainer 80.

The surface of the vapor deposition mask intersecting the firstrotational axis and the surface of the vapor deposition mask notintersecting the second rotational axis stated in the presentspecification mean regions each of which includes three pointsarbitrarily selected from the whole surface of the vapor depositionmask.

As to the aforementioned first rotating mechanism, while an angle formedby the surface of the vapor deposition mask and the first rotationalaxis is not specially limited as long as the condition of beingrotatable with the first rotational axis intersecting the surface of thevapor deposition mask being as an axis is satisfied, it is preferablyabout 45° to about 135°, still preferably about 85° to about 95°,particularly preferably 90°.

As to the aforementioned moving mechanism, while its moving direction isnot specially limited as long as the condition of being linearly movableis satisfied, an angle formed by an axis of the direction in which thevapor deposition mask is stretched and an axis of the direction in whichthe retainer 80 moves is preferably about 45° to about 135°, stillpreferably about 85° to about 95°, particularly preferably 90°.

Specific examples of the aforementioned retainer 80 can include theretainer 80 including at least one mechanism of the first rotatingmechanism rotatable with the first rotational axis perpendicular to thesurface of the vapor deposition mask 100 being as an axis, the secondrotating mechanism rotatable with the second rotational axis parallel tothe surface of the vapor deposition mask being as an axis, and themoving mechanism movable in the direction perpendicular to the directionin which the vapor deposition mask is stretched and the similar member.

When the stretching step is described, while “occurrence of twist” inthe occasion when the vapor deposition mask is stretched without therotating adjustment or the moving adjustment performed, for example,occurrence of “twist” in the occasion when the vapor deposition mask isstretched using a retainer not including any of the aforementioned firstrotating mechanism, second rotating mechanism and moving mechanism(hereinafter sometimes referred to as conventional retainer) is beingmentioned, an embodiment of the present invention in which the vapordeposition mask is stretched using a retainer including at least onemechanism of the aforementioned first rotating mechanism, secondrotating mechanism and moving mechanism is described. Notably, FIG. 8(a)and FIG. 9(a) are top views each of which shows a state where “twist”arises in the vapor deposition mask after the stretching step. FIG. 8(b)and FIG. 9(b) are top views each of which shows a state where “twist” inthe vapor deposition mask is suppressed by stretching the vapordeposition mask using the retainer characterized as mentioned above.Notably, in FIG. 8 and FIG. 9, the openings 25 and the slits 15 in thevapor deposition mask are omitted from the illustration. Moreover,“twist” is exaggerated in the figures.

The “twist” stated in the present specification is a concept includingwave-like wrinkles, distortion and the like arising in the vapordeposition mask in the occasion when the vapor deposition mask isstretched. Moreover, to “stretch the vapor deposition mask” stated inthe present specification means to exert external force (tensile force)thereon in the direction in which the vapor deposition mask 100 preparedabove is extended.

Moreover, the “retainer” stated in the present specification means amember retainable of a part of the vapor deposition mask, for example, aside of the vapor deposition mask with any device. A mode of retainingthe vapor deposition mask is not specially limited but, for example,when a clamp is used as the retainer, the vapor deposition mask isretained by clamping an end part or the like of the vapor depositionmask with the clamp. Moreover, when a member such as a metal plate and aresin plate is used as the retainer, the vapor deposition mask isretained by pasting the member and the end part of the vapor depositionmask together with an adhesive agent or fixing the member and the endpart of the vapor deposition mask to each other by welding or the like.Moreover, when a magnetic member having magnetism is used as theretainer, the vapor deposition mask is retained by allowing the magneticmember and the metal mask positioned in the vicinity of the end part ofthe vapor deposition mask to attract each other using magnetic force.The vapor deposition mask can also be retained in a mode other thanthese. Notably, in the case where the retaining force of the vapordeposition mask by the retainer is weak, the vapor deposition maskretained by the retainer 80 is sometimes displaced from the originalretaining position when stretched outward thereof. Hence, the retainingforce of the vapor deposition mask by the retainer is needed to haveretaining force to such an extent that the retaining position is notdisplaced when the vapor deposition mask is stretched. With theretaining force and simpleness in retaining the vapor deposition masktaken into consideration, the clamp is preferably used as the retainer.Notably, in modes shown in the figures, the description is made,exemplified by the cases where the retainer 80 is the clamp.

In the case where the vapor deposition mask is not correctly retained bythe retainer when the vapor deposition mask is stretched using theaforementioned conventional retainer, for example, in the case whereboth ends of the vapor deposition mask 100 are asymmetrically retaineddespite both ends of the vapor deposition mask 100 are parallellyretained by the retainer 80, “twist” is to arise in the vapor depositionmask 100 when the vapor deposition mask is stretched by operating adriving device such as a motor and an air cylinder joined with theretainer 80 (refer to FIG. 8(a)). Moreover, also in the case where bothends of the vapor deposition mask are not parallelly retained by theretainer 80, namely, in the case where the vapor deposition mask 100 isretained by the retainer 80 in the state of being obliquely inclined,“twist” arises in the vapor deposition mask 100 by stretching the vapordeposition mask (refer to FIG. 9(a)).

Since the resin mask 20 constituting the vapor deposition mask 100prepared in the aforementioned preparing step is composed of resinmaterial, while it has an advantage that the openings 25 with highdefinition can be formed, it has a problem that the dimension of theopenings 25 tends to suffer variation due to stress exerted from theoutside or the like. Further, when “twist” arises in the vapordeposition mask 100 in the stretching step, the dimension of theopenings 25 formed in the resin mask 20 tends to suffer variation, whichis an obstacle in the occasion when the vapor deposition pattern withhigh definition is formed using the frame-equipped vapor depositionmask.

In the method for producing a frame-equipped vapor deposition mask of anembodiment, any one or both adjustments of the rotating adjustment andthe moving adjustment of the vapor deposition mask 100 are performedwith respect to the stretched vapor deposition mask 100 or with thevapor deposition mask 100 being stretched, and thereby, “twist” whichcan arise due to stretching the vapor deposition mask is suppressed. Inthe method for producing a frame-equipped vapor deposition mask by wayof example, a part of the vapor deposition mask is retained by theretainer 80 including at least one of the aforementioned first rotatingmechanism, second rotating mechanism and moving mechanism, and the vapordeposition mask 100 retained by the retainer 80 is stretched outwardthereof. According to this example, operation of the mechanism includedin the retainer 80 enables the vapor deposition mask to be stretched inthe state of suppressing “twist” which can arise in the vapor depositionmask. Specifically, in the present step, the retainer 80 performs anyone or both adjustments of the rotating adjustment and the movingadjustment of the vapor deposition mask 100 with respect to thestretched vapor deposition mask 100 or with the vapor deposition mask100 being stretched, and thereby, suppresses “twist” which can arise dueto stretching the vapor deposition mask. Hereafter, the aforementionedfirst rotating mechanism, second rotating mechanism and the movingmechanism are sometimes collectively referred to as “mechanism in anembodiment of the present invention”. Moreover, the “rotatingadjustment” stated in the present specification means an adjustment ofsuppressing the aforementioned “twist” by rotating the vapor depositionmask using the first rotating mechanism or the second rotatingmechanism. The “moving adjustment” means an adjustment of suppressingthe aforementioned “twist” by moving the vapor deposition mask using theaforementioned moving mechanism.

FIG. 10 is a perspective view showing a state where the retainer 80 isrotated by the retainer 80 including the first rotating mechanism. Themode shown in the figure has a configuration in which the retainer 80 isrotated in the direction of the arrows with the first rotational axis(L1) perpendicular to the surface of the vapor deposition mask 100 beingas an axis. FIG. 11 is a perspective view showing a state where theretainer 80 is rotated by the retainer 80 including the second rotatingmechanism. The mode shown in the figure has a configuration in which theretainer 80 is rotated in the direction of the arrows with the secondrotational axis (L2) parallel to the surface of the vapor depositionmask 100 being as an axis. FIG. 12 is a perspective view showing a statewhere the retainer 80 is moved by the retainer 80 including the movingmechanism. The mode shown in the figure has a configuration movable inthe direction (L3 direction) perpendicular to the direction in which thevapor deposition mask is stretched. In FIG. 10 to FIG. 12, the openings25 and the slits 15 in the vapor deposition mask 100 are omitted fromthe illustration.

The first rotational axis and the second rotational axis are not limitedto the modes shown in the figures but, as described above, the axisintersecting the surface of the vapor deposition mask is sufficient tobe the first rotational axis and the axis not intersecting the surfaceof the vapor deposition mask to be the second rotational axis. Notably,FIG. 10 to FIG. 12 are preferable modes of the mechanisms included inthe retainers.

In the retainer in the preferable mode, the axis perpendicular to thesurface of the vapor deposition mask is the first rotational axis, theaxis parallel to the surface of the vapor deposition mask is the secondrotational axis, and the direction perpendicular to the direction inwhich the vapor deposition mask is stretched is the moving direction.Nevertheless, in the present specification, the description of beingperpendicular to the surface of the vapor deposition mask 100 and thedescription of being perpendicular to the direction in which the vapordeposition mask is stretched do not necessarily mean the angle of 90°with respect to the surface of the vapor deposition mask and thedirection in which the vapor deposition mask is stretched, but an anglewithin a range in which effects of an embodiment of the presentinvention are achieved is also allowed. In other words, an angle bywhich the vapor deposition mask can be rotated is sufficient andcomponents perpendicular to the surface of the vapor deposition mask andthe direction in which the vapor deposition mask is stretched aresufficient to be included, to such an extent that “twist” of the vapordeposition mask can be suppressed. Moreover, the description of beingparallel to the surface of the vapor deposition mask do not necessarilymean the angle of 0° with respect to the surface of the vapor depositionmask, but an angle within a range in which effects of an embodiment ofthe present invention are achieved is also allowed. In other words, anangle by which the vapor deposition mask can be moved is sufficient anda component parallel to the surface of the vapor deposition mask issufficient to be included, to such an extent that “twist” of the vapordeposition mask can be suppressed.

The method for producing a frame-equipped vapor deposition mask of anembodiment takes it as an essential condition that the retainerretaining a part of the vapor deposition mask includes at least onemechanism of the aforementioned “mechanisms in an embodiment of thepresent invention”. Examples of a preferable mode thereof can includemodes in which opposite two sides of the vapor deposition mask areretained by independent retainers 80, (i) the retainer 80 that retainsone side of the opposite two sides of the vapor deposition mask includesany one or both of the first rotating mechanism and the second rotatingmechanism and the retainer 80 that retains the other side includes themoving mechanism, or (ii) the retainer 80 that retains one side of theopposite two sides of the vapor deposition mask includes any one or bothof the first rotating mechanism and the second rotating mechanism andthe moving mechanism, and the like. In the mode shown by item (ii), theretainer 80 that retains the other side of the vapor deposition mask isnot necessarily needed to include the aforementioned “mechanism in anembodiment of the present invention”. The modes shown by items (i) and(ii) are preferable in that “twist” which can arise in the vapordeposition mask in the stretching step can be universally suppressed. Inother words, even when “twist” arises in any direction in stretching thevapor deposition mask, the “twist” can be relieved. Moreover, “twist”can be often suppressed by the retainer including the first rotatingmechanism, and accordingly, the rotating mechanism is preferably theretainer including the first rotating mechanism. Hereafter, suppressionof “twist” which can arise in the stretching step is described,exemplified by a retainer including the aforementioned “mechanism in anembodiment of the present invention”.

While in FIG. 8(a) and FIG. 9(a), “twist” arises in the vapor depositionmask 100 by stretching the vapor deposition mask 100, the vapordeposition mask 100 can be stretched in the state where “twist” issuppressed as shown in FIG. 8(b) and FIG. 9(b) by giving the movingmechanism to a retainer 80 a shown in FIG. 8, giving the first rotatingmechanism to a retainer 80 b, moving the retainer 80 a in the directionof the arrow and rotating the retainer 80 b in the direction of thearrow, and moreover, by giving the moving mechanism to the retainer 80 ashown in FIG. 9 and moving the retainer 80 a in the direction of thearrow.

In the stretching step, the retainer 80 retains a part of the vapordeposition mask to stretch the vapor deposition mask 100 outwardthereof, and performs any one or both adjustments of the rotatingadjustment and the moving adjustment of the vapor deposition mask 100 bythe aforementioned “mechanism in an embodiment of the present invention”included in the retainer 80 with the vapor deposition mask beingstretched or after stretched. Further, this adjustment suppresses“twist” which can arise due to stretching the vapor deposition mask 100.While more specific embodiments which can suppress “twist” are hereafterexemplarily described, an embodiment of the present invention is notlimited to these modes.

FIG. 13 is a top view showing a state in the occasion when the vapordeposition masks 100 are stretched and the vapor deposition masks 100 inthe state of being stretched are fixed onto a frame 60. In the modeshown in the figure, the retainers 80 including the “mechanisms in anembodiment of the present invention” are provided on a retainersupporting frame 90. The retainers 80 including the “mechanisms in anembodiment of the present invention” are rotatable and/or movable withrespect to the retainer supporting frame 90.

As an embodiment in which “twist” can be suppressed with the vapordeposition mask being stretched, modes in which a revolute pair, arectilinear pair, a sliding pair and the like such as bearings (ballbearings) are installed in the retainers 80 and the retainers 80 arepassively rotated in accordance with force (tensile force) which thevapor deposition mask receives in the stretching step can be cited.According to these modes, the retainers 80 passively undergo movement,rotation and the like, and as a result, the vapor deposition mask can bestretched while “twist” is suppressed.

FIG. 14(a) is a partially expanded top view showing a state where“twist” is suppressed with the vapor deposition mask 100 being stretchedby the retainer 80 in which the revolute pair is provided. FIG. 14(b) isan elevation view of FIG. 14(a). In the mode shown in FIG. 14, theretainer 80 is rotatable by the retainer 80 in which the revolute pairis provided with the first rotational axis intersecting the surface ofthe vapor deposition mask being as an axis, for example, with the firstrotational axis perpendicular to the surface of the vapor depositionmask 100 being as an axis (in the mode shown in the figure, with arotational axis perpendicular to the retainer 80 in which the revolutepair is provided being as an axis). Regions enclosed by broken lines inFIG. 14(a) are the vapor deposition mask in the occasion when “twist” isnot suppressed and the retainer before rotation, respectively. Moreover,using a rectilinear pair, the retainer 80 can be configured to bemovable.

As an embodiment in which “twist” is suppressed after the vapordeposition mask is stretched, a mode in which “twist” which arises dueto stretching the vapor deposition mask 100 is mechanically controlledcan be cited. For example, “twist” arising in the occasion when thevapor deposition mask 100 is stretched can be suppressed by connectingthe retainer 80 and a control device such as a motor together via atorque sensor or the like (not shown), detecting torque of the retainer80 arising due to “twist” in the occasion when the vapor deposition maskis stretched with the torque sensor or the like, and controlling amovement amount (distance) or a rotational angle of the retainer 80 withthe control device such as a motor such that the torque becomes 0. Inother words, “twist” which arises due to stretching the vapor depositionmask 100 can be actively controlled, and as a result, the “twist” can besuppressed. In this mode, the retainer 80 in which the control device isprovided is rotated with the rotational axis perpendicular to theretainer 80 in which the control device such as a motor is providedbeing as an axis.

Moreover, the mode in which “twist” is suppressed with the vapordeposition mask 100 being stretched and the mode in which “twist” issuppressed after the vapor deposition mask is stretched can also becombined. Moreover, as shown in FIG. 15, there can be a combination ofany mechanisms by stacking various mechanisms (in the mode shown in thefigure, the moving mechanism, the second rotating mechanism and thefirst rotating mechanism) on the retainer supporting frame 90 and fixingthe mechanisms to the retainer. For example, using the aforementionedrevolute pair as the first rotating mechanism and using the controldevice such as a motor as the second rotating mechanism and the movingmechanism, “twist” arising in the occasion when the vapor depositionmask is stretched can be actively suppressed by the second rotatingmechanism and the moving mechanism while passively suppressed with thefirst rotating mechanism. Moreover, in the mode shown in FIG. 15, thetorque sensor or the like described above may be provided between thefirst rotating mechanism and the retainer 80.

In the mode shown in FIG. 16, the retainer 80 is fixed to a gonio stage,the gonio stage is swung (moved) with the rotational axis perpendicularto the retainer 80 that does not include the gonio stage being as anaxis by rotating the shaft of the worm gear fixed to the retainersupporting frame 90, and “twist” of the vapor deposition mask 100retained by the retainers 80 is suppressed. Specifically, the torquesensor or the like detects the torque of the retainer 80 arising due to“twist” in the occasion when the vapor deposition mask is stretchedusing the torque sensor or the like, the swing (movement) of the goniostage is controlled by rotating the shaft of the worm gear such that thetorque becomes 0, and thereby, the “twist” of the vapor deposition maskcan be suppressed.

The driving device for driving the retainer 80 is not specially limitedbut, for example, a motor, an air cylinder and the like can be cited. Adriving device 85 is connected to the retainer 80 at a position of notinterfering to the mechanism by the “mechanism in an embodiment of thepresent invention”, and drive of the driving device drives the retainer80 to stretch the vapor deposition mask 100.

FIG. 17 is a plan view showing a state where tensile force is exerted onthe vapor deposition mask 100 retained by the retainers 80, and thevapor deposition mask is stretched by exerting the tensile force outwardin the lengthwise direction in portion (a) and by exerting the tensileforce outward in the lengthwise direction and the crosswise direction inportion (b). The direction in which the tensile force is exerted is notlimited to the modes shown in the figure but the tensile force may beexerted outward in the crosswise direction. Moreover, the tensile forcemay be exerted in a direction other than these, for example, in anoblique direction. Moreover, while in FIG. 17(a), both retainers 80 aredriven outward in the lengthwise direction, only one of the retainers 80may be driven. Notably, also in this case, any one retainer 80 of theretainer 80 driven outward and the retainer 80 not driven outward issufficient to include the aforementioned “mechanism in an embodiment ofthe present invention”.

While in the mode shown in FIG. 17, one side of the opposite two sidesof the vapor deposition mask is retained by one retainer 80, as shown inFIG. 18, the one side of the opposite two sides of the vapor depositionmask may be retained by a plurality of retainers 80 (in the mode shownin the figure, both sides of the opposite two sides are retained by aplurality of retainers). With this configuration, “twist” can berelieved at the right, left and center places, which enables “twist”over the entirety of the vapor deposition mask to be more effectivelysuppressed. When one side of the opposite two sides of the vapordeposition mask is retained by a plurality of retainers 80, all of theretainers retaining the one side preferably include the aforementioned“mechanisms in an embodiment of the present invention”. In particular,preferably, each of all of the retainers retaining the one side of theopposite two sides of the vapor deposition mask includes all of themechanisms of the first rotating mechanism, the second rotatingmechanism and the moving mechanism, or each of all of the retainersretaining the one side includes the first rotating mechanism and themoving mechanism. Moreover, as shown in the figure, both sides of theopposite two sides of the vapor deposition mask may be retained by aplurality of retainers.

When one side of the opposite two sides of the vapor deposition mask isretained by a plurality of retainers, (A) as shown in FIG. 18, thedriving devices 85 may be individually joined with the plurality ofretainers and the driving devices joined with the retainers may beindividually driven to stretch the vapor deposition mask, or (B) onedriving device may be joined with the plurality of retainers (not-shown)and the one driving device may be driven to stretch the vapor depositionmask.

In the case of the mode of the aforementioned item (A), stretchingamounts in stretching the vapor deposition mask can be controlled forthe individual retainers, which enables “twist” to be more effectivelysuppressed. Notably, in the mode shown in FIG. 18, the retainers arecontrolled separately with the corresponding driving devices and oneretainer of the plurality of retainers does not restrict movement of theother retainers. Accordingly, in the case of the mode of theaforementioned item (A), the mechanisms individually included in theplurality of retainers may be the same mechanisms or may be differentmechanisms. For example, in the mode shown in FIG. 18, one retainer ofthe plurality of retainers may include the “moving mechanism” andanother retainer may include any one or both of the “first rotatingmechanism” and the “second rotating mechanism”. Notably, this does notmean that it is an essential condition that the individual retainersinclude different mechanisms, but in the mode of the aforementioned item(A), all of the retainers retaining one side of the vapor depositionmask may include the same mechanism. For example, all of the retainersmay include all the mechanisms of the first rotating mechanism, thesecond rotating mechanism and the moving mechanism, or each of all theretainers may include the first rotating mechanism and the movingmechanism. Moreover, when the retainer 80 retaining one side of theopposite two sides of the vapor deposition mask is in the mode of theaforementioned item (A), while the retainer 80 retaining the other sideof the opposite two sides of the vapor deposition mask may include no“mechanism in an embodiment of the present invention”, as shown in FIG.18, it is preferably in the mode of the aforementioned item (A).

On the other hand, in the case of the mode of the aforementioned item(B), one driving device simultaneously drives the plurality ofretainers. Accordingly, when the plurality of retainers individuallyinclude different mechanisms, there can arise a concern that oneretainer of the plurality of retainers prevents movement of anotherretainer. With this point taken into consideration, in the case of themode of the aforementioned item (B), all of the plurality of retainerspreferably include the same mechanism. For example, all of the retainersretaining one side of the opposite two sides of the vapor depositionmask preferably include all of the first rotating mechanism, the secondrotating mechanism and the moving mechanism or each of all the retainerspreferably individually includes the first rotating mechanism and themoving mechanism. Moreover, when the retainer 80 retaining one side ofthe opposite two sides of the vapor deposition mask is in the mode ofthe aforementioned item (B), while the retainer 80 retaining the otherside of the opposite two sides of the vapor deposition mask is notneeded to include the “mechanism in an embodiment of the presentinvention”, the retainer 80 retaining the one side of the opposite twosides of the vapor deposition mask and the retainer 80 retaining theother side thereof preferably include the same mechanisms.

The mode of retaining the opposite two sides of the vapor depositionmask by the retainers 80 is above described, exemplified by the casewhere the shape of the vapor deposition mask in plan view isrectangular. When the vapor deposition mask whose shape in plan view isother than rectangular is used, the aforementioned description ofopposite two sides of the vapor deposition mask is sufficient to bereplaced by any two places on the outer circumference of the vapordeposition mask, the description of one side of the opposite two sidesto be replaced by one place of any two places, and the description ofthe other of the opposite two sides to be replaced by the other place ofany two places. Such any two places are not specially limited but theyare preferably portions in which a straight line passing at asubstantial center of the vapor deposition mask in plan view intersectsthe outer circumference of the vapor deposition mask.

According to the stretching step described above, any one or both of therotating adjustment and the moving adjustment of the vapor depositionmask are performed with the vapor deposition mask being stretched orafter stretched. Hence, occurrence of “twist” in the vapor depositionmask can be suppressed. Specifically, the vapor deposition mask 100 canbe stretched in the state where “twist” is suppressed by performing thestretching step using the retainer 80 including the “mechanism in anembodiment of the present invention”.

In the case where the retainer 80 described above is in the mode ofbeing passively rotated or moved in accordance with force that the vapordeposition mask 100 receives, the retainer 80 is passively rotated ormoved in accordance with the force in the occasion of such moving whenthe vapor deposition mask 100 retained by the retainer 80 is moved afterthe stretching step, for example, when the vapor deposition mask 100retained by the retainer 80 is moved to place the vapor deposition mask100 on the frame 60, or when the vapor deposition mask 100 retained bythe retainer 80 is moved to position the vapor deposition mask 100relative to the frame 60. Thus, there is a case where the state of thevapor deposition mask 100 in which “twist” is suppressed in theaforementioned stretching step cannot be maintained.

With such a point taken into consideration, the state where the vapordeposition mask has undergone any of the rotating adjustment and themoving adjustment is preferable locked by the retainer 80 to maintainthe state of the vapor deposition mask having undergone suppression of“twist” after the stretching step. In other words, in the stretchingstep, a locking step of locking the vapor deposition mask havingundergone any one or both adjustments of the rotating adjustment and themoving adjustment such that the state after the adjustment is maintainedis preferably further included. In the method for producing aframe-equipped vapor deposition mask by way of example, after thelocking step, the locked vapor deposition mask 100 is fixed to the framein which a through hole is formed. By locking the retainer 80, even whenthe vapor deposition mask 100 retained by the retainer 80 undergoesmovement or the like after the end of the stretching step, the statewhere “twist” is suppressed can be continuously maintained, which canprevent variation of the vapor deposition mask 100 in which “twist” issuppressed from arising. A locking mechanism is not specially limitedbut it is sufficient to be a mechanism that can perform stretchingoutward thereof and can maintain the state of the vapor deposition maskhaving undergone the “rotating adjustment” or the “moving adjustment”.In other words, it is sufficient to be a mechanism with which the vapordeposition mask 100 does not rotate or move after the stretching step.The locking mechanism may be an external mechanism not included in theretainer 80 itself or may be an internal mechanism included in theretainer 80 itself.

As the external mechanism, a mechanism that can exert stress on theretainer 80, for example, a mechanism that externally exerts stress onthe retainer 80 and suppresses the vapor deposition mask from rotatingor moving after the stretching step can be cited. To summarize, it is amechanism that invalidates the first rotating mechanism, the secondrotating mechanism or the moving mechanism included in the retainer 80by externally exerting stress. As such a mechanism, for example, an aircylinder, a motor and the like can be cited. By exerting stress in thevertical direction on the retainer 80 using the air cylinder, the motoror the like, the first rotating mechanism, the second rotating mechanismor the moving mechanism in the retainer 80 can be invalidated, namely,the vapor deposition mask can be suppressed from rotating or movingafter the stretching step.

As the internal mechanism, the retainer 80 that can control the movementamount and the rotational angle of the vapor deposition mask 100 withthe control device such as a motor shown above by way of example can becited. In other words, the retainer 80 that can actively control themovement amount and the rotational angle of the vapor deposition mask100 can be cited. According to such a retainer 80, the vapor depositionmask can be mechanically controlled from rotating or moving after thestretching step.

The vapor deposition mask 100 is fixed to the frame 60 in the statewhere the vapor deposition mask 100 is in contact with the frame 60, inother words, in the state where the vapor deposition mask 100 is placedon the frame 60. Hence, as mentioned later, when the frame 60 in which areinforcement frame 65 is provided (refer to FIG. 21) is used as theframe 60 to which the vapor deposition mask 100 is fixed, the vapordeposition mask 100 is in contact with the reinforcement frame 60. Inthe case where the vapor deposition mask 100 comes into contact with thereinforcement frame 65 when the vapor deposition mask 100 in which“twist” is suppressed in the stretching step is placed on the frame 60,there can be a case where the vapor deposition mask 100 suffersdistortion at the place of the contact and variation in dimension of theopenings 25 provided in the resin mask 20 of the vapor deposition mask100 arises. Moreover, also in the case where a positioning stepmentioned later is performed in the state where the vapor depositionmask 100 is placed on the frame 60, there can be a case where the vapordeposition mask 100 suffers distortion in the stage of positioning.Moreover, in the case where the aforementioned stretching step isperformed in the state where the vapor deposition mask 100 is placed onthe frame 60, although “twist” of the vapor deposition mask can besuppressed, there can be a case where the vapor deposition mask 100suffers distortion at the place of the contact of the vapor depositionmask 100 with the frame 60.

Therefore, the method for producing a frame-equipped vapor depositionmask in a preferable mode further includes a first placing step ofplacing the vapor deposition mask 100 on the frame 60, a separating stepof separating the vapor deposition mask 100 from the frame 60 after thefirst placing step, and a second placing step of placing the vapordeposition mask 100 again on the frame 60 after the separating step,wherein the fixing step is performed after the second placing step, torelieve distortion of the vapor deposition mask 100 arising due tocontact of the vapor deposition mask 100 with the frame 60. According tothe method for producing a frame-equipped vapor deposition mask of anembodiment further including the first placing step, the separating stepand the second placing step, distortion which can arise in the vapordeposition mask in the first-time placing step of placing the vapordeposition mask 100 on the frame 60 is relieved in the separating step,the vapor deposition mask 100 from which the distortion is relieved isplaced again on the frame 60 (second placing step), and thereby, thevapor deposition mask from which the distortion is relieved can be fixedonto the frame 60 in the fixing step mentioned later. To summarize, themethod for producing a frame-equipped vapor deposition mask in apreferable mode is in that distortion which can arise in the vapordeposition mask 100 due to contact of the vapor deposition mask 100 withthe frame 60 in the first placing step is relieved in the separatingstep. Notably, while the stretching step described above may beperformed in any stage before the first placing step, between the firstplacing step and the separating step, between the separating step andthe second placing step, or after the second placing step, it ispreferably performed before the separating step in which distortionwhich can arise in the vapor deposition mask is relieved. In otherwords, the aforementioned stretching step is preferably performed beforethe first placing step or between the first placing step and theseparating step. This is because if the stretching step is performedafter the separating step, the state of the vapor deposition mask fromwhich distortion is relieved tends to suffer variation.

The method for producing a frame-equipped vapor deposition maskincluding the aforementioned first placing step, separating step andsecond placing step is particularly preferable when the openings 25formed in the resin mask 20 of the vapor deposition mask 100 arepositioned to a position corresponding to a pattern to be produced byvapor deposition in the state where the vapor deposition mask 100 isplaced on the frame 60 in the first placing step. In other words, it ispreferable when the positioning is performed between the steps of thefirst placing step and the separating step. This is because the vapordeposition mask 100 tends to suffer distortion when positioning isperformed in the state where the vapor deposition mask 100 is placed onthe frame 60. Hereafter, a positioning step of positioning the openings25 formed in the resin mask 20 of the vapor deposition mask 100 to aposition corresponding to a pattern to be produced by vapor depositionis described.

Positioning Step

The positioning step is an arbitrary step in the method for producing aframe-equipped vapor deposition mask of an embodiment of the presentinvention, and a step of positioning the openings 25 formed in the resinmask 20 of the vapor deposition mask 100 to a position corresponding toa pattern to be produced by vapor deposition. In other words, it is astep of determining position coordinates of the vapor deposition mask100 with respect to the frame 60 such that the openings 25 formed in theresin mask 20 of the vapor deposition mask 100 match a positioncorresponding to a pattern to be produced by vapor deposition. Byperforming the positioning step, a frame-equipped vapor deposition maskwith which a vapor deposition pattern can be produced on a vapordeposition target with excellent position precision can be obtained.

A method of positioning the openings 25 formed in the resin mask 20 ofthe vapor deposition mask 100 to a position corresponding to a patternto be produced by vapor deposition is not specially limited but aconventionally known positioning method or the like can be properlyselected and used. For example, a method in which a reference sheet forpositioning the openings 25 formed in the resin mask 20 to a positioncorresponding to a pattern to be produced by vapor deposition isimplemented in the frame 60 to determine position coordinates of thevapor deposition mask using the reference sheet, an alignment markprovided in the vapor deposition mask and the like can be cited. Inplace of implementing the reference sheet in the frame 60, the referencesheet may be positioned above the vapor deposition mask placed on theframe so as not to be in contact with the vapor deposition mask.Moreover, not using the reference sheet, coordinates or the like of theopenings 25 formed in the resin mask 20 of the vapor deposition mask 100can also be used to determine the position coordinates of the vapordeposition mask. As to a moving method of the vapor deposition mask 100,the frame 60 and the like for determining the position coordinates ofthe vapor deposition mask, a conventionally known moving device (drivingdevice) can be properly selected and used. For example, a drive stagethat moves the retainer 80 retaining the vapor deposition mask and theframe 60 in an in-plane direction can be provided to adjust the positioncoordinates of the vapor deposition mask with a motor (electrically) ora micrometer (manually).

While in the present embodiment, the vapor deposition mask 100 is placedagain on the frame 60 in the second placing step, which results incontact of the vapor deposition mask 100 with the frame 60, distortionarising in the vapor deposition mask 100 in the first placing step isrelieved in the separating step. Thereby, as compared with the casewhere the frame-equipped vapor deposition mask is produced in aproducing method not including the separating step and the secondplacing step, the frame-equipped vapor deposition mask in whichdimension variation of the openings 25 in the resin mask 20 of the vapordeposition mask 100 is suppressed can be produced. Moreover, whendistortion still arises in the vapor deposition mask after the secondplacing step, the separating step and the second placing step only haveto be repeated.

A method of separating the vapor deposition mask 100 from the frame 60is not specially limited but, for example, the vapor deposition mask 100can be separated from the frame 60 by giving a moving mechanism, forexample, a vertical moving mechanism to the retainer 80 retaining thevapor deposition mask 100 and driving the retainer 80 in the directionintersecting, for example, the direction substantially perpendicular tothe surface of the vapor deposition mask. Moreover, the vapor depositionmask 100 can also be separated from the frame 60 by giving a movingmechanism, for example, a vertical moving mechanism to a drive stage(not-shown) driving the frame 60 and driving the drive stage in thedirection intersecting, for example, the direction substantiallyperpendicular to the surface of the vapor deposition mask. Notably, whenthe retainer 80 is driven, the pair of retainers 80 retaining the vapordeposition mask 100 are needed to be simultaneously driven, andmoreover, there is a possibility that this driving causes distortion and“twist” to arise in the vapor deposition mask 100. Hence, the drivestage that does not cause distortion and “twist” to arise in the vapordeposition mask 100 is preferably used to separate the vapor depositionmask 100 from the frame 60.

While the positioning step is performed between the steps of the firstplacing step and the separating step is mainly exemplarily describedabove, the positioning step may be performed before the first placingstep, between the separating step and the second placing step or afterthe second placing step. Notably, when the positioning step is performedafter the separating step, variation tends to arise in the state of thevapor deposition mask from which distortion is relieved in theseparating step. With this point taken into consideration, thepositioning step is preferably performed before the separating step, inother words, before the first placing step or between the first placingstep and the separating step. Moreover, when the positioning step is notspecially needed, distortion which can arise in the vapor depositionmask in the first placing step can also be relieved in theaforementioned separating step and second placing step, not performingthe positioning step. The same holds true for a precise adjusting stepmentioned later.

While in the aforementioned preferable mode, distortion which can arisein the vapor deposition mask 100 in the first placing step is relievedin the separating step, dimension variation and shape variation of theopenings 25 provided in the resin mask 20 of the vapor deposition mask100 due to the distortion may be modified using a physical device. Thedimension variation mentioned here is a concept including positioncoordinate variation of openings and dimension variation of theopenings.

The method for producing a frame-equipped vapor deposition mask inanother preferable mode further includes, as shown in FIG. 24, a preciseadjusting step of performing precise adjustment on the vapor depositionmask by placing the vapor deposition mask 100 in the state of beingstretched on the frame 60 after the stretching step, stacking anauxiliary member 50 on one surface of the vapor deposition mask 100which is placed on the frame 60 and is in the state of being stretched,fixing the auxiliary member 50 to the vapor deposition mask 100 in atleast part of a portion in which the one surface of the vapor depositionmask 100 overlaps with the auxiliary member 50, and pulling theauxiliary member, wherein the fixing step is performed after the preciseadjusting step. According to the method for producing a frame-equippedvapor deposition mask in another preferable mode, a physical deviceusing the auxiliary member 50 can modify dimension variation and shapevariation of the openings 25, which enables the vapor deposition mask100 including the resin mask 20 in which the openings 25 are provided tobe fixed to the frame 60 in the state where dimensional precision of theopenings 25 is maintained to be high.

FIGS. 24(a) and 24(b) are views of the vapor deposition mask 100 as seenfrom the resin mask 20 side and the illustration of the frame 60 isomitted therein. FIG. 24(a) shows a state where variation arises inshape or dimension of the openings 25 due to contact of the vapordeposition mask 100 with the frame 60 at places designated by signs Aand the like.

Moreover, in FIG. 24(a), the auxiliary members 50 are fixed to the vapordeposition mask 100 in at least parts of portions in which the surfaceof the vapor deposition mask 100 on the resin mask 20 side overlaps withthe auxiliary members 50. Further, by pulling the auxiliary members 50in the direction of the arrows, as shown in FIG. 24(b), the vapordeposition mask 100 in which dimension variation or shape variation ofthe openings 25 in the resin mask 20 is suppressed can be achieved.

The present embodiment is different from the aforementioned method forproducing a frame-equipped vapor deposition mask including the firstplacing step, the separating step and the second placing step in thatvariation in dimension and shape of the openings 25 arising due todistortion is relieved by a precise adjustment using a physical device,for example, the aforementioned auxiliary member 50, not relievingdistortion in the separating step. In any of the modes, the vapordeposition mask 100 including the resin mask 20 in which the openings 25are provided can be fixed to the frame 60 in the state where dimensionalprecision of the openings 25 is maintained to be high, in the fixingstep mentioned later.

Moreover, also in the present embodiment, the positioning step describedabove can be performed before or after the precise adjusting step.Notably, in view of being able to relieve distortion which can arise inthe vapor deposition mask in the positioning step by the preciseadjusting step, the positioning step is preferably performed before theprecise adjusting step. Moreover, the first placing step/separatingstep/second placing step described above and the precise adjusting stepcan also be combined and used. By combining these steps, distortionwhich can arise due to the vapor deposition mask 100 coming into contactwith the frame 60 can be more effectively relieved. Notably, the preciseadjusting step may be performed before the first placing step, after thesecond placing step or between any steps of the first placing step tothe second placing step. Notably, in view of being able to relievingposition coordinate variation of the openings and dimension variation ofthe openings in the precise adjusting step, the precise adjusting stepis preferably performed immediately before the fixing step.

As shown in FIGS. 25(a) to 25(c), the retainer 80 in a preferable modeincludes a projection part 82 on its surface. Specifically, the retainer80 in a preferable mode is composed of a body part 81 and the projectionpart 82. When a part of the vapor deposition mask 100 is retained by theretainer 80, a tip portion of the projection part 82 comes into contactwith the vapor deposition mask 100. According to the retainer 80 in apreferable mode, a contact area of the vapor deposition mask 100 withthe retainer 80 can be made small, which enables occurrence of wrinklesand the like which can arise in the vapor deposition mask in retainingthe vapor deposition mask 100 by the retainer 80 to be suppressed. FIGS.25(a) to 25(c) are partial schematic cross-sectional views showingstates where the vapor deposition mask 100 is retained by the retainer80.

A shape of the tip portion of the projection part 82 is not speciallylimited but, as shown in FIG. 25(a), the shape of the tip portion ispreferably an R shape, in other words, a shape in which the shape of thetip portion has curvature. A direction of the curvature is not limitedbut the R shape of the tip portion may have curvature in thelongitudinal direction of the retainer or may have it in the short-sidedirection thereof. Otherwise, it may have curvature like a semicircle.According to the projection part 82 whose tip portion is the R shape,while the contact area of the vapor deposition mask 100 with theretainer 80 can be made further smaller, a damage which the resin mask20 of the vapor deposition mask 100 suffers can be suppressed by theprojection part 82. As shown in FIG. 25(d), the projection part 82 maybe arranged to extend in the longitudinal direction or the short-sidedirection of the retainer 80. As shown in FIGS. 25(e) and 25(f), aplurality of those may be arranged at predetermined intervals in thelongitudinal direction or the short-side direction of the body part 81of the retainer 80. FIGS. 25(d) to 25(f) are views exemplarily showingthe retainer 80 including the projection part on its surface in planview from the projection part 82 side.

The material of the projection part 82 is not specially limited but aconventionally known metal material, resin material or the like can beproperly selected and used. By making the contact area of the vapordeposition mask 100 with the retainer 80 small with the projection part82, retaining force of the vapor deposition mask 100 by the retainer 80tends to deteriorate. With this point taken into consideration, theprojection part 82 is preferably composed of material high in retainingforce, in other words, material high in gripping ability. As thematerial high in gripping ability, the materials exemplarily presentedfor the aforementioned resin mask, conventionally known resins otherthan these and the like can be cited. Above all, the projection part 82composed of high elasticity material, for example, elastic rubber ispreferable in view of being able to more enhance gripping ability of theretainer 80 with the vapor deposition mask 100. Notably, since the bodypart 81 does not come into direct contact with the vapor deposition mask100, there may be any material such as metal material, resin materialand materials other than these.

While in the mode shown in the figure only the retainer 80 on the sideof being in contact with one surface of the vapor deposition mask 100(in the mode shown in the figure, the upper surface) includes theprojection part 82 and the retainer 80 on the side of being in contactwith the other surface of the vapor deposition mask 100 (in the modeshown in the figure, the lower surface) does not include the projectionpart 82, also the retainer 80 on the side of being in contact with theother surface of the vapor deposition mask 100 may include theprojection part 82. Moreover, only the retainer 80 on the side of beingin contact with the other surface of the vapor deposition mask 100 mayinclude the projection part 82.

Fixing Step

As shown in FIG. 19 and FIG. 20, the fixing step is a step of performingoverlapping on the frame 60 in which a through hole is formed such thatthe frame portion of the frame 60 opposes the metal mask 10 of the vapordeposition mask in the state of being stretched in the stretching step,and fixing the vapor deposition mask 100 in the state of being stretchedin the stretching step to the frame 60. Fixing of the vapor depositionmask 100 to the frame 60 is performed at a position where the metalportion of the vapor deposition mask is in contact with the frame 60,and the position is not specially limited (refer to the “fixingpositions” in FIG. 19 and FIG. 20). FIG. 19 is a top view of theframe-equipped vapor deposition mask in which one vapor deposition maskis fixed to the frame 60 as seen from the resin mask side. FIG. 20 is atop view of the frame-equipped vapor deposition mask 200 in which aplurality of vapor deposition masks 100 are fixed to the frame 60 asseen from the resin mask side. Notably, in the modes shown in thefigures, the end parts of the vapor deposition masks 100 protrudeoutward from the end parts of the frames and the protruding parts areretained by the retainers 80.

Frame

The frame 60 is a substantially rectangular frame member and includes athrough hole for exposing the openings 25 provided in the resin mask 20of the vapor deposition mask 100 fixed in the final stage to the vapordeposition source side. The material of the frame is not speciallylimited but metal material large in rigidity such, for example, as SUSand invar material is preferable. Ceramic material and the like can beused. Above all, a metal frame is preferable in view of being able toeasily performing fixing of the metal mask of the vapor deposition maskthereto by welding or the like and being small in influence ofdeformation and the like.

The thickness of the frame 60 is not specially limited but it ispreferably about 10 mm to about 30 mm in view of rigidity and the like.The width between the inner circumference end face of the opening of theframe and the outer circumference end face of the frame is not speciallylimited in the case of the width with which the metal mask of the vapordeposition mask can be fixed to the frame but, for example, it isexemplarily a width of about 10 mm to about 70 mm.

Moreover, as shown in FIGS. 21(a) to 21(c), the frame 60 in which areinforcement frame 65 or the like is provided in a region of thethrough hole may be used within a range where the openings 25 of theresin mask 20 composing the vapor deposition mask 100 are not preventedfrom being exposed. To provide the reinforcement frame 65 enables thevapor deposition mask 100 to be fixed to the frame 60 using thereinforcement frame 65.

The fixing method is not specially limited but the vapor deposition mask100 can be fixed to the frame 60 using various conventionally knownwelding methods such as laser welding, arc welding, electric resistancewelding and an electron beam welding method, an adhesive agent, screwfastening and the like. After the vapor deposition mask is fixed to theframe, by cutting portions of the vapor deposition mask that protrudefrom the frame, as shown in FIG. 22 and FIG. 23, the frame-equippedvapor deposition mask 200 having the vapor deposition mask fixed to theframe is obtained. FIG. 22 is a top view exemplarily showing theframe-equipped vapor deposition mask 200 obtained by cutting theprotruding portions after the vapor deposition mask 100 shown in FIG. 19is fixed to the frame 60 and a view as seen from the resin mask side.FIG. 23 is a top view exemplarily showing the frame-equipped vapordeposition mask 200 obtained by cutting the protruding portions afterthe vapor deposition masks 100 shown in FIG. 20 are fixed to the frame60 and a view as seen from the resin mask side.

In the aforementioned method for producing a frame-equipped vapordeposition mask of an embodiment, the vapor deposition mask is fixed tothe frame 60 in the state where the vapor deposition mask is beingstretched, in other words, in the state where tensile force is exertedon the vapor deposition mask. Here, focusing on the vapor depositionmask 100 after the fixing step is ended, counterforce corresponding tothe tensile force arises on the vapor deposition mask 100 in the reversedirection to the direction in which the vapor deposition mask isstretched in the stretching step, and when this counterforce is large,there can be a case where this causes a problem that distortion arisesin the vapor deposition mask fixed to the frame or a similar problem.

Therefore, in the method for producing a frame-equipped vapor depositionmask in a preferable mode, with counterforce which can arise in thevapor deposition mask 100 after fixing taken into consideration, thevapor deposition mask is fixed to the frame 60. Specifically, the vapordeposition mask 100 is fixed to the frame 60 such that the counterforcewhich can arise in the vapor deposition mask 100 after fixing iscancelled. More specifically, with the counterforce which can arise inthe vapor deposition mask 100 after the fixing step taken intoconsideration, the vapor deposition mask is fixed to the frame in thestate where compressive stress corresponding to the counterforce isexerted on the frame 60. According to this mode, by relieving thecompressive stress exerted on the frame after the fixing step, thecounterforce which can arise in the vapor deposition mask 100 can becancelled, which enables distortion and the like due to the counterforcewhich can arise in the vapor deposition mask to be suppressed fromarising in the vapor deposition mask fixed to the frame. Notably, thecounterforce which can arise in the vapor deposition mask 100 afterfixing is force corresponding to the tensile force exerted on the vapordeposition mask 100 in the stretching step.

In other words, the method for producing a frame-equipped vapordeposition mask in a preferable mode further includes a step of exertingcompressive stress on the frame 60 in the fixing step and a step ofrelieving the compressive stress after the fixing step.

The compressive stress exerted on the frame 60 may be performed with thecounterforce which can arise in the vapor deposition mask, namely thetensile force exerted on the vapor deposition mask in the stretchingstep taken into consideration. For example, when the frame-equippedvapor deposition mask having one vapor deposition mask 100 fixed to theframe is produced, the vapor deposition mask 100 is sufficient to befixed to the frame 60 in the state where compressive stresscorresponding to tensile force exerted on the one vapor deposition maskis exerted on the frame 60. Specifically, assuming that the tensileforce exerted on the vapor deposition mask in the stretching step is“1”, the vapor deposition mask 100 is sufficient to be fixed to theframe 60 in the state where compressive stress of “1” is exerted on theframe 60. According to this method, the counterforce arising in thevapor deposition mask can be cancelled by relieving the compressivestress exerted on the frame after the fixing step, which enablesdistortion or the like due to the counterforce to be suppressed fromarising in the vapor deposition mask fixed to the frame 60.

Next, the case where a plurality of vapor deposition masks are fixed tothe frame 60 is described. When a plurality of vapor deposition masks100 are fixed to the frame 60, compressive stress is exerted on theframe 60 with counterforce which can arise in each vapor deposition mask100 taken into consideration, and the vapor deposition masks 100 aresequentially fixed to the frame 60 while the compressive stress is beingchanged in stages. Specifically, counterforce of the vapor depositionmasks that have been already fixed to the frame is subtracted from thetotal counterforce of the plurality of vapor deposition masks, fixing isperformed in the state where the compressive stress corresponding to thecounterforce after the subtraction is exerted on the frame.

For example, in the case where three vapor deposition masks aresequentially fixed to the frame 60, assuming that tensile force exertedon each vapor deposition mask and counterforce arising in each vapordeposition mask are “1”, the total counterforce of the vapor depositionmasks is “3”.

In the stage where the vapor deposition masks are not fixed to theframe, in other words, when a first vapor deposition mask is to be fixedto the frame, fixing is performed in the state where compressive stressof “3” which is the counterforce of the whole vapor deposition masks isexerted on the frame 60. Next, when fixing a second vapor depositionmask, fixing is performed in the state where compressive stress obtainedby subtracting the counterforce of one vapor deposition mask 100 thathave been already fixed to the frame 60 from “3” which is thecounterforce of the whole vapor deposition masks, in other words,compressive stress of “2” is exerted on the frame 60. When fixing athird vapor deposition mask, fixing is performed in the state wherecompressive stress obtained by subtracting the total counterforce of twovapor deposition masks that have been already fixed to the frame 60 from“3” which is the counterforce of the whole vapor deposition masks, inother words, compressive stress of “1” is exerted on the frame 60. Then,after to fix all of the vapor deposition masks to the frame is ended,the compressive stress is relieved.

According to this method, all of the counterforce arising in each of theplurality of vapor deposition masks can be cancelled by relieving thecompressive stress exerted on the frame, after the fixing step, whichenables distortion or the like due to the counterforce to be suppressedfrom arising in all of the vapor deposition masks.

The method of exerting compressive stress on the frame 60 is notspecially limited but, for example, an air cylinder, a motor or the likecan be used. The compressive stress is sufficient to be exerted in thereverse direction to the direction in which the vapor deposition mask isstretched in the stretching step, in other words, in the same directionas the direction in which the counterforce arises.

As above, the method for producing a frame-equipped vapor depositionmask of an embodiment of the present invention has been described. Themethod for producing a frame-equipped vapor deposition mask of anembodiment of the present invention is not limited to the aforementionedembodiments but proper modifications can occur without departing fromthe spirit of an embodiment of the present invention. For example, whilein the above, as the mode of retaining a part of the vapor depositionmask 100, the mode of retaining opposite two sides of the vapordeposition mask 100 by the retainers 80 is mainly described, all of thesides of the vapor deposition mask 100 can also be retained by theretainers 80. In this case, at least one retainer of the retainers 80which retain the vapor deposition mask 100 is sufficient to include anymechanisms of the aforementioned first rotating mechanism, secondrotating mechanism and moving mechanism. Two or more retainers or all ofthe retainers 80 may include any mechanisms of the aforementioned firstrotating mechanism, second rotating mechanism and moving mechanism.

Stretching Apparatus

Next, a stretching apparatus of an embodiment of the present inventionis described. The stretching apparatus of an embodiment of the presentinvention is a stretching apparatus for stretching a vapor depositionmask and includes: a retainer that retains a part of the vapordeposition mask; and a stretching mechanism for stretching the vapordeposition mask retained by the retainer, wherein the retainer includesat least one mechanism of a first rotating mechanism rotatable with afirst rotational axis intersecting a surface of the vapor depositionmask being as an axis, a second rotating mechanism rotatable with asecond rotational axis not intersecting the surface of the vapordeposition mask being as an axis, and a linearly movable movingmechanism.

The stretching apparatus by way of example includes the retainer forretaining a part of the vapor deposition mask, wherein the retainerincludes at least one mechanism of the first rotating mechanismrotatable with the first rotational axis perpendicular to the surface ofthe vapor deposition mask being as an axis, the second rotatingmechanism rotatable with the second rotational axis parallel to thesurface of the vapor deposition mask being as an axis, and the movingmechanism movable in the direction perpendicular to the direction inwhich the vapor deposition mask is stretched.

The retainer composing the stretching apparatus can properly select andemploy the various modes of the retainers 80 described for theaforementioned method for producing a frame-equipped vapor depositionmask, and its detailed description is omitted here. Moreover, the vapordeposition mask stretched by the stretching apparatus can also properlyselect and employ the various modes of the vapor deposition masks 100described for the aforementioned method for producing a frame-equippedvapor deposition mask, and its detailed description is omitted here.

According to the stretching apparatus of an embodiment of the presentinvention, occurrence of “twist” which can arise due to stretching thevapor deposition mask can be suppressed.

Moreover, in the stretching apparatus in a preferable mode, the retainercomposing the stretching apparatus includes the locking mechanism.According to the stretching apparatus in a preferable mode, occurrenceof “twist” can be further suppressed. The locking mechanism is asdescribed for the aforementioned method for producing a frame-equippedvapor deposition mask and its detailed description is omitted here.

Moreover, the stretching apparatus in a preferable mode includes thedrive stage for driving the frame. The drive stage includes the movingmechanism movable in the direction intersecting the installation planeof the stretching apparatus, in other words, in the directionintersecting the surface of the vapor deposition mask. It stillpreferably includes the vertical moving mechanism movable in thedirection substantially perpendicular to the surface of the vapordeposition mask. Moreover, in the stretching apparatus in anotherpreferable mode, the retainer includes the moving mechanism movable inthe direction intersecting the installation plane of the stretchingapparatus, in other words, in the direction intersecting the surface ofthe vapor deposition mask. It still preferably includes the verticalmoving mechanism movable in the direction substantially perpendicular tothe surface of the vapor deposition mask. The direction intersecting theinstallation plane of the stretching apparatus is not specially limitedbut properly configured. Moreover, to be substantially perpendicularstated here means the direction of about 85° to about 95° with respectto the installation plane of the stretching apparatus, preferably 90°.

Apparatus for Producing Organic Semiconductor Device

Next, an apparatus for producing an organic semiconductor device of anembodiment of the present invention (hereinafter referred to asapparatus for producing an organic semiconductor device of anembodiment) is described. The apparatus for producing an organicsemiconductor device of an embodiment is characterized in having thestretching apparatus of an embodiment described above implemented in aconventionally known organic semiconductor apparatus for producing anorganic semiconductor device. As to the stretching apparatus implementedin the apparatus for producing an organic semiconductor device of anembodiment, the aforementioned stretching apparatus of an embodiment canbe properly selected and used and its detailed description is omittedhere.

The apparatus for producing an organic semiconductor device of anembodiment is not limited in any manner other than the stretchingapparatus of an embodiment implemented therein but a conventionallyknown apparatus for producing an organic semiconductor device whichapparatus forms a vapor deposition pattern of the organic semiconductordevice in a vapor deposition method using a vapor deposition mask issufficient to be properly selected and have the aforementionedstretching apparatus of an embodiment implemented therein.

According to the apparatus for producing an organic semiconductor deviceof an embodiment, an organic semiconductor device can be produced usingthe frame-equipped vapor deposition mask in which the vapor depositionmask in the state where “twist” is suppressed by the stretchingapparatus implemented in the relevant producing apparatus is fixed tothe frame. Accordingly, an organic semiconductor device with a highdefinition pattern can be formed to match the dimensions of the openingsformed in the vapor deposition mask.

Method for Producing Organic Semiconductor Device

Next, an embodiment of a method for producing an organic semiconductordevice of an embodiment of the present invention is described. Themethod for producing an organic semiconductor device of an embodiment ofthe present invention includes a step of forming a vapor depositionpattern in a vapor deposition method using a frame-equipped vapordeposition mask, wherein the following frame-equipped vapor depositionmask is used in the step of forming the organic semiconductor device.The vapor deposition method using the frame-equipped vapor depositionmask is not limited in any manner but, for example, examples thereof caninclude PVD (Physical Vapor Deposition) methods such as a reactivesputtering method, a vacuum vapor deposition method, ion plating and anelectron beam vapor deposition method, CVD (Chemical Vapor Deposition)methods such as thermal CVD, plasma CVD and photo-induced CVD, and thelike.

The method for producing an organic semiconductor device of anembodiment including the step of forming the vapor deposition pattern inthe vapor deposition method using the frame-equipped vapor depositionmask includes an electrode forming step of forming electrodes on asubstrate, an organic layer forming step, a counter electrode formingstep, a sealing layer forming step and the like. In any of these steps,the vapor deposition pattern is formed on the substrate in the vapordeposition method using the frame-equipped vapor deposition mask. Forexample, when the vapor deposition method using the frame-equipped vapordeposition mask is applied to the organic layer forming step, the vapordeposition pattern of the organic layer is formed on the substrate.Notably, the method for producing an organic semiconductor device of anembodiment of the present invention is not limited to these steps butcan be applied to any conventionally known steps in the organicsemiconductor device using the vapor deposition method.

The aforementioned method for producing an organic semiconductor deviceof an embodiment includes a step of forming a vapor deposition patternon a vapor deposition target using a frame-equipped vapor depositionmask in which a vapor deposition mask is fixed to a frame, wherein theframe-equipped vapor deposition mask used in the step of forming thevapor deposition pattern is a frame-equipped vapor deposition maskobtained by a stretching step of retaining a part of the vapordeposition mask by a retainer, stretching the vapor deposition maskretained by the retainer outward thereof, and performing any one or bothadjustments of a rotating adjustment and a moving adjustment of thevapor deposition mask with respect to the vapor deposition mask in astate of being stretched or with the vapor deposition mask beingstretched, and a fixing step of fixing, after the stretching step, thevapor deposition mask in the state of being stretched to the frame inwhich a through hole is formed.

The method for producing an organic semiconductor device of anembodiment by way of example is characterized in that in a step offorming a vapor deposition pattern, a vapor deposition mask fixed to aframe is a frame-equipped vapor deposition mask produced by the steps ofa preparing step of preparing the vapor deposition mask including ametal mask in which a plurality of slits are formed and a resin mask inwhich openings corresponding to a pattern to be produced by vapordeposition are formed at a position overlapping with the slits, themetal mask and the resin mask being stacked, a stretching step ofretaining opposite two sides of the vapor deposition mask prepared inthe preparing step by retainers, and stretching the vapor depositionmask by pulling at least one of the retainers outward of the vapordeposition mask, and a fixing step of fixing the vapor deposition maskto the frame in which a through hole is formed in a state where thevapor deposition mask is being stretched, in that at least one of theretainers retaining the vapor deposition mask in the stretching step isa retainer including at least one mechanism of a first rotatingmechanism rotatable with a first rotational axis perpendicular to asurface of the vapor deposition mask being as an axis, a second rotatingmechanism rotatable with a second rotational axis parallel to thesurface of the vapor deposition mask being as an axis, and a movingmechanism movable in a direction perpendicular to a direction in whichthe vapor deposition mask is stretched, and in that in the stretchingstep, any one or both adjustments of a rotating adjustment and a movingadjustment of the vapor deposition mask are performed by the retainerwith respect to the vapor deposition mask stretched outward thereof orwith the vapor deposition mask being stretched outward thereof.

In other words, it is characterized in that the frame-equipped vapordeposition mask used in the method for producing an organicsemiconductor device is the frame-equipped vapor deposition maskproduced in the method for producing a frame-equipped vapor depositionmask of an embodiment of the present invention described above.According to the frame-equipped vapor deposition mask characterized asabove, since the vapor deposition mask is fixed to the frame in thestate where “twist” is suppressed, an organic semiconductor device witha high definition pattern can be formed to match the dimensions of theopenings formed in the vapor deposition mask. Examples of the organicsemiconductor device produced in the producing method of an embodimentof the present invention can include, for example, organic layers, lightemitting layers and cathode electrodes of an organic EL element and thelike. In particular, the method for producing an organic semiconductordevice of an embodiment of the present invention can be preferably usedfor producing R, G and B light emitting layers of an organic EL elementwhich need high definition pattern precision.

REFERENCE SIGNS LIST

-   10 Metal mask-   15 Slit-   20 Resin mask-   25 Opening-   60 Frame-   80 Retainer-   81 Body part-   82 Projection part-   85 Driving device-   90 Retainer supporting frame-   100 Vapor deposition mask-   200 Frame-equipped vapor deposition mask

The invention claimed is:
 1. A stretching apparatus for stretching avapor deposition mask, comprising: a retainer configured to retain apart of the vapor deposition mask; and a stretching mechanism forstretching the vapor deposition mask retained by the retainer, whereinthe retainer includes at least one mechanism of a first rotatingmechanism rotatable with a first rotational axis intersecting a surfaceof the vapor deposition mask being as an axis, a second rotatingmechanism rotatable with a second rotational axis not intersecting thesurface of the vapor deposition mask being as an axis, and a linearlymovable moving mechanism, and wherein the vapor deposition mask is fixedto a frame, and the stretching apparatus further comprises a drive stagefor driving the frame, and the drive stage includes a moving mechanismmovable in a direction intersecting an installation plane of thestretching apparatus on which the vapor deposition mask is retained. 2.The stretching apparatus according to claim 1, further comprising alocking mechanism for maintaining a state of the vapor deposition maskhaving undergone any of rotation and movement with respect to the vapordeposition mask in a state of being stretched by the stretchingmechanism or with the vapor deposition mask being stretched by thestretching mechanism by any mechanism of the first rotating mechanism,the second rotating mechanism and the moving mechanism of the retainer.3. The stretching apparatus according to claim 1, wherein the retainerincludes a moving mechanism movable in a direction intersecting aninstallation plane of the stretching apparatus.
 4. An apparatus forproducing an organic semiconductor device, wherein the stretchingapparatus according to claim 1 is implemented.
 5. The stretchingapparatus according to claim 1, wherein the apparatus includes saidsecond rotating mechanism.
 6. The stretching apparatus according toclaim 1, wherein the apparatus includes said first rotating mechanismand said second rotating mechanism.
 7. The stretching apparatusaccording to claim 1, wherein the stretching mechanism is movablelinearly in a first direction and the linearly movable moving mechanismis movable in a direction perpendicular to the first direction.